The interface between the organic semiconductor (OSC)/ferromagnetic (FM) material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from the FM to OSC layer leading to the formation of “spinterface,” i.e., the interface exhibiting a finite magnetic moment. In this work, the magnetic properties of the Co/C60 bilayer thin film have been studied to probe the interface between the Co and C60 layer. Polarized neutron reflectivity (PNR) measurement indicates that the thickness and moment of the spinterface are ∼2 ± 0.18 nm and 0.8 ± 0.2 μB/cage, respectively. The comparison of the magnetization reversal between the Co/C60 bilayer and the parent single layer Co thin film reveals that spinterface modifies the domain microstructure. Further, the anisotropy of the bilayer system shows a significant enhancement (∼two times) in comparison to its single layer counterpart which is probably due to an additional interfacial anisotropy arising from the orbital hybridization at the Co/C60 interface.
The electrochemical growth of Heusler alloy film with good morphological quality and crystalline order using singlecrystalline substrate is demonstrated. Static magneto optical Kerr effect studies are employed to reveal the surface magnetization reversal of the films. An understanding of the intrinsic nature of the magnetization dynamics in this class of electrochemically grown materials is presented using time-resolved magneto optical Kerr effect measurements, under femtosecond laser excitation. Excitation laser fluence dependence study reveals the ultrafast demagnetization time, fast remagnetization time, and magnetic damping parameter as well as their correlation.
The signature of magnetism without a ferromagnet in a non-magnetic heterostructure is novel as well as fascinating from fundamental research point of view. It has been shown by Al’Mari et...
The demand of fast and power efficient spintronic devices with flexibility requires additional energy for magnetization manipulation. Stress/ strain have shown their potentials for tuning magnetic properties to the desired level. Here, we report a systematic study for the effect of both tensile and compressive stresses on the magnetic anisotropy (MA). Further the effect of stress on the domain structure and magnetization relaxation mechanism in a perpendicularly magnetized Co/Pt film has been studied. It is observed that a minimal in-plane tensile strain has increased the coercivity of the film by 33% of its initial value, while a very small change of coercivity has been found under compressive strain. The size of ferromagnetic domains decreases under tensile strain, while no change is observed under the compressive strain. Magnetization relaxation measured at sub-coercive field values yields a longer relaxation time in the strained state.
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