“…They act as shallow acceptors, deep level donors, and recombination centers, resulting in reduced device performance with the increasing the Raman peak area at 233 cm −1 . 41–44 Furthermore, it shows similar behavior to those at 171 cm −1 , resulting in maximum device performances, expect J sc values, for Raman peak area at 245 cm −1 of 0.064 (Fig. 4(c)).…”
Section: Resultssupporting
confidence: 55%
“…Recently some of the studies unveiled that the Zn Cu anti-site defects are benign in terms of device performance. 41,42 However, it should be noted that, with an increase in the Zn content, the probability of formation of the Zn substitutional defects increases at higher Zn concentrations, including the deep level Zn Sn and shallow level Zn Cu anti-site. Basically, the substitution of Zn on the Cu site (Zn Cu ) results in an ionized positive charge and makes them shallow donors.…”
The main cause of the large open-circuit voltage (Voc)-deficit in kesterite-based thin-film solar cells (TFSCs) is the high concentration of defects, related defects clusters, and poor band tailing characteristics. We...
“…They act as shallow acceptors, deep level donors, and recombination centers, resulting in reduced device performance with the increasing the Raman peak area at 233 cm −1 . 41–44 Furthermore, it shows similar behavior to those at 171 cm −1 , resulting in maximum device performances, expect J sc values, for Raman peak area at 245 cm −1 of 0.064 (Fig. 4(c)).…”
Section: Resultssupporting
confidence: 55%
“…Recently some of the studies unveiled that the Zn Cu anti-site defects are benign in terms of device performance. 41,42 However, it should be noted that, with an increase in the Zn content, the probability of formation of the Zn substitutional defects increases at higher Zn concentrations, including the deep level Zn Sn and shallow level Zn Cu anti-site. Basically, the substitution of Zn on the Cu site (Zn Cu ) results in an ionized positive charge and makes them shallow donors.…”
The main cause of the large open-circuit voltage (Voc)-deficit in kesterite-based thin-film solar cells (TFSCs) is the high concentration of defects, related defects clusters, and poor band tailing characteristics. We...
“…In particular, this issue is related to the back contact due to the bulky MoS 2 presence already described in other works of our research group 11 , 25 and to the well-known bulk features typical of the kesterite phase and also revealed by PL analysis. 46 …”
In the last few decades,
the attention of scientific community
has been driven toward the research on renewable energies. In particular,
the photovoltaic (PV) thin-film technology has been widely explored
to provide suitable candidates as top cells for tandem architectures,
with the purpose of enhancing current PV efficiencies. One of the
most studied absorbers, made of earth-abundant elements, is kesterite
Cu
2
ZnSnS
4
(CZTS), showing a high absorption
coefficient and a band gap around 1.4–1.5 eV. In particular,
thanks to the ease of band-gap tuning by partial/total substitution
of one or more of its elements, the high-band-gap kesterite derivatives
have drawn a lot of attention aiming to find the perfect partner as
a top absorber to couple with silicon in tandem solar cells (especially
in a four-terminal architecture). In this work, we report the effects
of the substitution of tin with different amounts of germanium in
CZTS-based solar cells produced with an extremely simple sol–gel
process, demonstrating how it is possible to fine-tune the band gap
of the absorber and change its chemical–physical properties
in this way. The precursor solution was directly drop-cast onto the
substrate and spread with the aid of a film applicator, followed by
a few minutes of gelation and annealing in an inert atmosphere. The
desired crystalline phase was obtained without the aid of external
sulfur sources as the precursor solution contained thiourea as well
as metal acetates responsible for the in situ coordination and thus
the correct networking of the metal centers. The addition of KCl in
dopant amounts to the precursor solution allowed the formation of
well-grown compact grains and enhanced the material quality. The materials
obtained with the optimized procedure were characterized in depth
through different techniques, and they showed very good properties
in terms of purity, compactness, and grain size. Moreover, solar-cell
prototypes were produced and measured, exhibiting poor charge extraction
due to heavy back-contact sulfurization as studied in depth and experimentally
demonstrated through Kelvin probe force microscopy.
“…The FF is calculated by equating the maximum power (Pmax) to the theoretical power (Pt) that would be output at both the short circuit current (Jsc) and open circuit voltage (Voc) together as given in Equation ( 6). The ratio of the energy output from the photovoltaic solar cell to the energy input from the sun is the power conversion efficiency (PCE) and is mathematically expressed in Equation ( 7) [35]. The curves of current density-voltage (J−V) characteristic and quantum efficiencywavelength (QE-λ) were obtained, and these are shown in Figures 4 and 5, respectively.…”
Section: Figure 2 J−v Characteristics Of Lead-free N-i-p Pscsmentioning
In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.
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