Reversible modulation of superconductivity in YBa 2 Cu 3 O 7-δ /polypyrrole sandwich structures

Haupt, Steven G.; Riley, David R.; Zhao, Jianai; Zhou, Jiping; Grassi, James; McDevitt, John T.

doi:10.1117/12.182687

Cited by 8 publications

(3 citation statements)

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“…The electric-doublelayer transistor (EDLT), which is composed of the interface between crystalline solids and electrolytes, can be a good candidate to realize such a clean system, since the conduction carriers are induced electrostatically at the atomically flat surfaces without introducing extrinsic disorder. In addition, the EDLT has the greatest advantage of their applicability to a wide range of materials, as exemplified by gate-induced superconductivity in three-dimensional SrTiO3 (3, 11, 12), KTaO3 (13), quasi-2D layered ZrNCl (14), transition metal dichalcogenides (15-17) and cuprates (18)(19)(20)(21)(22). Here, we report comprehensive transport studies on a ZrNCl-EDLT, which provide evidence of 2D superconductivity in this system based on several types of analyses.…”

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confidence: 99%

Metallic ground state in an ion-gated two-dimensional superconductor

Saito

Kasahara

et al. 2015

Science

278

311

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Recently emerging two-dimensional (2D) superconductors in atomically thin layers and at heterogeneous interfaces are attracting growing interest in condensed matter physics. Here, we report that an ion-gated zirconium nitride chloride surface, exhibiting a dome-shaped phase diagram with a maximum critical temperature of 14.8 kelvin, behaves as a superconductor persisting to the 2D limit. The superconducting thickness estimated from the upper critical fields is ≅ 1.8 nanometers, which is thinner than one unit-cell. The majority of the vortex phase diagram down to 2 kelvin is occupied by a metallic state with a finite resistance, owing to the quantum creep of vortices caused by extremely weak pinning and disorder. Our findings highlight the potential of electric-field-induced superconductivity, establishing a new platform for accessing quantum phases in clean 2D superconductors.

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confidence: 99%

Metallic ground state in an ion-gated two-dimensional superconductor

Saito

Kasahara

et al. 2015

Science

278

311

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“…Electrolyte gating of HTS cuprates was pioneered in the nineties by McDevitt and coworkers91011. After being dormant for over a decade, the field has experienced a great renaissance in recent years, and apart from cuprates812 it has been applied to various other complex oxides13141516 as well as other correlated electron materials1718192021.…”

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confidence: 99%

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

Dubuis

Yacoby

Zhou

et al. 2016

Sci Rep

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We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms.

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“…No chemical reactions should take place between the film and the electrolyte, and the interface should be impermeable to the passage of ions from one side to the other. Pioneering work in the field of HTS electrolyte FET devices was carried out more than two decades ago by McDevitt and collaborators [27][28][29][30][31]. Reversible changes of T c were induced in YBaCuO, BSCCO, and TBCCO films, as high as ∆T c > 50 K.…”

Section: Ht-is With Electrolyte Dopingmentioning

confidence: 99%

High Temperature Interface Superconductivity

Логвенов

Gozar

Božović

2013

J Supercond Nov Magn

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High-T c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layerby-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both 'passive' hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

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Reversible modulation of superconductivity in YBa 2 Cu 3 O 7-δ /polypyrrole sandwich structures

Cited by 8 publications

References 0 publications

Metallic ground state in an ion-gated two-dimensional superconductor

Metallic ground state in an ion-gated two-dimensional superconductor

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

High Temperature Interface Superconductivity

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