High Temperature Interface Superconductivity

Логвенов, Г.; Gozar, A.; Božović, I.

doi:10.1007/s10948-013-2215-3

Cited by 3 publications

(2 citation statements)

References 57 publications

(63 reference statements)

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“…In this section we review early results as well as data up to about a few years ago on HT-IS. Additional information can be found in several previously published reviews [4,10]. The first results on HT-IS in cuprates were obtained by J. Eckstein and I. Bozovic at Varian Research in California [7] only a few years after the discovery of HTS materials [11].…”

Section: Ht-is: History and Developmentmentioning

confidence: 99%

High temperature interface superconductivity

Gozar

Božović

2016

Physica C: Superconductivity and its Applications

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High-T c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both 'passive' hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

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Section: Ht-is: History and Developmentmentioning

confidence: 99%

High temperature interface superconductivity

Gozar

Božović

2016

Physica C: Superconductivity and its Applications

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“…The ease of doping and thickness control has resulted in ultra-high quality films and heterostructures allowing the investigation of the nature of the dimensionality of copper oxide [98][99][100]. For more details on the synthesis-related details, we refer to recent review articles on the growth of cuprates using layer-by-layer MBE [101,102].…”

Section: Cuprates: the Original High Tc Superconductormentioning

confidence: 99%

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Rimal,

Comes

2024

J. Phys. D: Appl. Phys.

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Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise of many novel quantum materials that require ultra-clean and high-quality samples for fundamental studies and applications. Novel oxide-based quantum materials synthesized using MBE have advanced the development of the field and materials. In this review, we discuss the recent progress in new MBE techniques that have enabled synthesis of complex oxides that exhibit "quantum" phenomena, including superconductivity and topological electronic states. We show how these techniques have produced breakthroughs in the synthesis of 4d and 5d oxide films and heterostructures that are of particular interest as quantum materials. These new techniques in MBE offer a bright future for the synthesis of ultra-high quality oxide quantum materials.

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Dopant size effects on novel functionalities: High-temperature interfacial superconductivity

Suyolcu

Wang

Baiutti

et al. 2017

Sci Rep

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Among the range of complex interactions, especially at the interfaces of epitaxial oxide systems, contributing to the occurrence of intriguing effects, a predominant role is played by the local structural parameters. In this study, oxide molecular beam epitaxy grown lanthanum cuprate-based bilayers (consisting of a metallic (M) and an insulating phase (I)), in which high-temperature superconductivity arises as a consequence of interface effects, are considered. With the aim of assessing the role of the dopant size on local crystal structure and chemistry, and on the interface functionalities, different dopants (Ca2+, Sr2+ and, Ba2+) are employed in the M-phase, and the M–I bilayers are investigated by complementary techniques, including spherical-aberration-corrected scanning transmission electron microscopy. A series of exciting outcomes are found: (i) the average out-of-plane lattice parameter of the bilayers is linearly dependent on the dopant ion size, (ii) each dopant redistributes at the interface with a characteristic diffusion length, and (iii) the superconductivity properties are highly dependent on the dopant of choice. Hence, this study highlights the profound impact of the dopant size and related interface chemistry on the functionalities of superconducting oxide systems.

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High Temperature Interface Superconductivity

Cited by 3 publications

References 57 publications

High temperature interface superconductivity

High temperature interface superconductivity

Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Dopant size effects on novel functionalities: High-temperature interfacial superconductivity

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