Reversible and Irreversible Voltage Manipulation of Interfacial Magnetic Anisotropy in 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Pt</mml:mi></mml:math>
/
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Co</mml:mi></mml:math>
/Oxide Multilayers

Fassatoui, Aymen; Garcia, Jose Peña; Ranno, Laurent; Vogel, Jan; Bernand-Mantel, Anne; Béa, Hélène; Pizzini, S.; Pizzini, S.

doi:10.1103/physrevapplied.14.064041

Cited by 16 publications

(13 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in our previous work, the magnetization can be switched to a fully saturated OOP configuration by applying a negative gate voltage that oxidizes the Co layer. [19] In this state, the MFM image (Figure 2a) shows, as expected, no magnetic contrast.…”

Section: Nonvolatile Manipulation Of the Pma In Pt/co/tbo X Stackssupporting

confidence: 65%

“…We may then define the magnetic state obtained after the application of the bias voltage as nonvolatile. As already illustrated by our previous work, [19] the progressive and non-volatile variation of the magnetic anisotropy leads us to exclude electronic charge accumulation/depletion effects and to suggest that the voltage-driven migration of oxygen ions is the most probable driving mechanism. Since a positive bias drives oxygen ions away from the Co layer, this leads to a decrease of its oxidation which causes a decrease of the PMA (see sketch in Figure 2d).…”

Section: Nonvolatile Manipulation Of the Pma In Pt/co/tbo X Stacksmentioning

confidence: 61%

“…While Pt/Co/AlO x was the first system in which chiral domain walls could be driven efficiently by spin-orbit torque, [17] Pt/Co/TbO x may become ferrimagnetic, with reduced magnetization, and acquire interesting domain wall dynamics properties, if terbium is sufficiently reduced. [18] As reported in our previous work, [19] the PMA of these systems Magneto-ionics is a fast developing research field which opens the perspective of energy efficient magnetic devices, where the magnetization direction is controlled by an electric field which drives the migration of ionic species. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of Pt/ Co/oxide stacks covered by ZrO 2 , acting as a ionic conductor, is tuned by a gate voltage at room temperature.…”

mentioning

confidence: 75%

“…Pt(4)/Co(1.1 to 1.2)/TbO x (0.6) and Pt(4)/Co(0.6)/AlO x (1) magnetic stacks (thicknesses in nm) were deposited by magnetron sputtering on Si/SiO 2 wafers (see also ref. [19]). After patterning the films into 1-, 2-, and 5-μm wide strips by electron beam lithography (EBL) and ion-beam etching, a 10 nm thick ZrO 2 dielectric layer was deposited by atomic layer deposition (ALD).…”

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

Fassatoui

Ranno

Garcia

et al. 2021

Small

Self Cite

View full text Add to dashboard Cite

interaction, like Pt/Co, but surprisingly also at FM-oxide interfaces. [2] This is attributed to the hybridization between the metal and the oxygen electronic orbitals across the interfaces, as confirmed by ab initio calculations. [3] The amplitude of this interaction is strongly sensitive to the degree of oxidation of the metal/oxide interface. Previous studies carried out for several Pt/Co/oxide stacks show that the PMA evolves with the cobalt oxidation rate following a typical bell-like curve. [2,[4][5][6][7] The maximum PMA is obtained for the optimal oxidation of the FM/oxide interface, when all the metal interfacial FM atoms are bonded to oxygen atoms. If the contribution of the Pt/FM interface to the PMA is not sufficient to promote out-ofplane magnetization, an increase of the FM oxidation may help driving the magnetization from in-plane (IP) to out-plane (OOP) (see Figure 3b)The interfacial anisotropy at the FMoxide interface can be manipulated by an electric field via electronic [8][9][10] or magneto-ionic effects. [1] The largest effects of the electric field on the PMA were obtained by triggering the oxidation of cobalt via the migration of oxygen ions. [11][12][13] Up to recent years, this mechanism was observed to be slow and to require high temperatures, since the voltage-driven switching between IP and OOP magnetization was shown to require several minutes at room temperature. [11] A voltage-driven mechanism in which the modification of interfacial PMA is attributed to the migration of hydrogen, rather than to the less mobile oxygen ions, was recently proposed as a more efficient [14,15] and faster (down to 2 ms) [16] way to switch the magnetization easy axis direction.In this work, we show that by depositing on top of the magnetic stack a thin ZrO 2 layer acting as an oxygen ion conductor, a huge voltage-driven variation of the PMA can be obtained for two model systems for spintronic applications, Pt/Co/AlO x and Pt/Co/TbO x trilayers. While Pt/Co/AlO x was the first system in which chiral domain walls could be driven efficiently by spin-orbit torque, [17] Pt/Co/TbO x may become ferrimagnetic, with reduced magnetization, and acquire interesting domain wall dynamics properties, if terbium is sufficiently reduced. [18] As reported in our previous work, [19] the PMA of these systems Magneto-ionics is a fast developing research field which opens the perspective of energy efficient magnetic devices, where the magnetization direction is controlled by an electric field which drives the migration of ionic species. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of Pt/ Co/oxide stacks covered by ZrO 2 , acting as a ionic conductor, is tuned by a gate voltage at room temperature. A large variation of the PMA is obtained by modifying the oxidation of the cobalt layer through the migration of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with under-oxidized Co, to in-plane, with over-oxidized Co, passing through an out-of-plane magnetization state. T...

show abstract

Section: Nonvolatile Manipulation Of the Pma In Pt/co/tbo X Stackssupporting

confidence: 65%

Section: Nonvolatile Manipulation Of the Pma In Pt/co/tbo X Stacksmentioning

confidence: 61%

mentioning

confidence: 75%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

Fassatoui

Ranno

Garcia

et al. 2021

Small

Self Cite

View full text Add to dashboard Cite

show abstract

“…Pt(4)/Co(1.1 to 1.2)/TbOx(0.6) and Pt(4)/Co(0.6)/AlOx(1) magnetic stacks were deposited by magnetron sputtering on Si/SiO 2 wafers (see also [18]). After patterning the films into 1-µm, 2-µm and 5µm wide strips by electron beam lithography (EBL) and ion-beam etching, a 10 nm thick ZrO 2 dielectric layer was deposited by atomic layer deposition (ALD).…”

Section: Methodsmentioning

confidence: 99%

Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers

Fassatoui,

Ranno,

Garcia

et al. 2021

Preprint

View full text Add to dashboard Cite

Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast developing research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but by an electric field, leading to a considerable reduction of energy consumption. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of a series of Pt/Co/oxide trilayers covered by a ZrO2 layer, acting as a ionic conductor, was finely tuned by a gate voltage at room temperature. The non-volatility and the time evolution of the effect point at oxygen ion migration across the ZrO2 layer as the driving mechanism. A large variation of the PMA is obtained by modifying the degree of oxidation of the cobalt layer with the flux of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with an under-oxidized Co, to in-plane, with an over-oxidized Co, passing through an out-of-plane magnetization with maximum PMA. The switching time between the different magnetic states is limited by the oxygen ion drift velocity through the multilayer structure. This was shown to depend exponentially on the applied bias voltage, and could be varied by over 5 orders of magnitude, from several minutes to a few ms. On the other hand, for a fixed gate-voltage, the oxidation of the cobalt layer decreases exponentially as a function of time. This behavior is in agreement with the theoretical model developed by Cabrera and Mott (1949) to explain the growth of very thin oxides at low temperatures. The possibility to explain the observed effect with a relatively simple theoretical model opens the possibility to engineers materials with optimized properties.

show abstract

Magneto‐Ionics in Annealed W/CoFeB/HfO₂ Thin Films

Pachat

Ourdani

Syskaki

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

The magneto‐ionic modulation of the Dzyaloshinskii–Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2 stacks annealed at different temperatures and for varying annealing times, are presented in this work. A large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 °C, whereas no response to voltage is observed in the as‐grown samples. A strong DMI is only observed in the samples annealed at 390 °C for 1 h, while PMA is present for all annealing times at temperatures of 390 and 350 °C. Magnetic properties including domain wall velocity improve drastically with increasing the annealing temperature and time, while the magneto‐ionic reversibility is increasingly compromised. The changes in PMA and DMI induced by the gate voltages in the samples annealed at 390 °C are permanent, while partial reversibility is only observed for the samples annealed at 350 °C for short times. This dependence of reversibility on post‐grown annealing has been associated to the influence of crystallization on ion mobility. These results show that a compromise between the enhancement of the magnetic properties and the magneto‐ionic performance could be needed in systems requiring annealing to develop PMA and DMI.

show abstract

Reversible and Irreversible Voltage Manipulation of Interfacial Magnetic Anisotropy in Pt / Co /Oxide Multilayers

Cited by 16 publications

References 42 publications

Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers

Magneto‐Ionics in Annealed W/CoFeB/HfO₂ Thin Films

Contact Info

Product

Resources

About

Reversible and Irreversible Voltage Manipulation of Interfacial Magnetic Anisotropy in Pt / Co /Oxide Multilayers

Cited by 16 publications

References 42 publications

Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

Kinetics of Ion Migration in the Electric Field‐Driven Manipulation of Magnetic Anisotropy of Pt/Co/Oxide Multilayers

Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers

Magneto‐Ionics in Annealed W/CoFeB/HfO2 Thin Films

Contact Info

Product

Resources

About

Magneto‐Ionics in Annealed W/CoFeB/HfO₂ Thin Films