Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is generally considered as an intrinsic parameter set during the sample deposition. In this work, we experimentally demonstrate that a gate voltage can control this key parameter. We probe the chirality of skyrmions and chiral domain walls by observing the direction of their current-induced motion and show that a gate voltage can reverse it. This local and dynamical reversal of the chirality is due to a sign inversion of the interfacial Dzyaloshinskii-Moriya interaction that we attribute to ionic migration of oxygen under gate voltage. Micromagnetic simulations show that the chirality reversal is a continuous transformation, in which the skyrmion is conserved. This control of chirality with 2–3 V gate voltage can be used for skyrmion-based logic devices, yielding new functionalities.

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The magneto‐ionic modulation of the Dzyaloshinskii–Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2 stacks annealed at different temperatures and for varying annealing times, are presented in this work. A large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 °C, whereas no response to voltage is observed in the as‐grown samples. A strong DMI is only observed in the samples annealed at 390 °C for 1 h, while PMA is present for all annealing times at temperatures of 390 and 350 °C. Magnetic properties including domain wall velocity improve drastically with increasing the annealing temperature and time, while the magneto‐ionic reversibility is increasingly compromised. The changes in PMA and DMI induced by the gate voltages in the samples annealed at 390 °C are permanent, while partial reversibility is only observed for the samples annealed at 350 °C for short times. This dependence of reversibility on post‐grown annealing has been associated to the influence of crystallization on ion mobility. These results show that a compromise between the enhancement of the magnetic properties and the magneto‐ionic performance could be needed in systems requiring annealing to develop PMA and DMI.

The perpendicular magnetic anisotropy (PMA) and the interfacial Dzyaloshinskii-Moriya interaction (iDMI) are investigated in as grown and 300 • C annealed Co-based ultrathin systems. For this, Co films of various thicknesses (0.8 nm t Co 5.7 nm) were deposited by magnetron sputtering on thermally oxidized Si substrates using Pt, W, Ir, Ti, Ru and MgO buffer or/and capping layers. X-ray diffraction was used to investigate their structural properties and vibrating sample magnetometry (VSM) was used to determine the magnetic dead layer thickness and the magnetization at saturation (M s ). VSM revealed that the M s for the Pt and the Ir buffered and capped films is the largest. Microstrip line ferromagnetic resonance (MS-FMR), used to extract the gyromagnetic ratio of the thicker Co films, revealed the existence of a second order PMA term, which is thickness dependent. Brillouin light scattering (BLS) in the Damon-Eshbach configuration was used to investigate the thickness dependence of the iDMI effective constant from the spin wave vector dependence of the frequency difference between Stokes and anti-Stokes lines. BLS and MS-FMR techniques were combined to measure the spin wave frequency variation as a function of the in-plane applied magnetic field (where the second order PMA contribution vanishes). The thickness dependence of the effective magnetization was then deduced and used to investigate PMA. For all the systems, PMA results from interface and volume contributions that we determined. The largest interface PMA constants were obtained for Pt-and Ir-based systems due to the electron hybridization of Co with these heavy metals having high spin orbit coupling. Annealing at 300 • C increases both the interface PMA and iDMI for the Pt/Co/MgO most probably due to de-mixing of interpenetrating oxygen atoms from the Co layer and the formation of a sharp Co/O interface.

In this work, we present the magneto-ionic response to ionic liquid gating in Ta/CoFeB/MgO/HfO2 stacks, where heavy metal dusting layers of Ta, W, and Pt are inserted at the Ta/CoFeB and CoFeB/MgO interfaces. Dusting layers of W inserted at the Ta/CoFeB interface increase perpendicular magnetic anisotropy (PMA) by more than 50%, while no significant changes are seen for Pt. In these samples, gating cannot break the PMA seeded at the CoFeB/MgO interface, only relatively small changes in the coercivity can be induced, about 20% for Ta and Pt and 6% for W. At the CoFeB/MgO interface, a significant quenching of the magnetization is seen when W and Ta dusting layers are inserted, which remains unchanged after gating, suggesting a critical deterioration of the CoFeB. In contrast, Pt dusting layers result in an in-plane anisotropy that can be reversibly converted to PMA through magneto-ionic gating while preserving the polycrystalline structure of the MgO layer. This shows that dusting layers can be effectively used not only to engineer magnetic properties in multilayers but also to strongly modify their magneto-ionic performance.

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Correlation between interfacial Dzyaloshinskii–Moriya interaction (iDMI), perpendicular magnetic anisotropy (PMA) and spin pumping-induced damping was investigated in CoFeB-based systems grown by sputtering on Si substrates, using Pt, Ta, Cu, W and MgO capping layers. Vibrating sample magnetometer, Brillouin light scattering (BLS) and broadband ferromagnetic resonance techniques were combined for this aim. The CoFeB thickness dependence of iDMI and PMA constants, in CoFeB/X (where X = Pt, Cu/Pt, Ta/Pt or W/Al), revealed that only the CoFeB/Pt system presents a measurable iDMI and that the interfacial PMA is mostly similar except for the Ta/CoFeB/Ta/Pt system. Therefore, no clear correlation between the above-mentioned interfacially-driven and spin-orbit coupling related quantities was observed due to their different origins in our systems. An efficient sample design involving various spacer layers of variable thicknesses in Ta/CoFeB(1.5 nm)/Y/Pt (where Y = Cu, Ta, MgO) allowed evidence of a linear correlation between iDMI, PMA constants and the effective spin mixing conductance. The linear dependence, which could result from the narrow variation range of PMA and/or iDMI, is attributed to the similar interface orbital hybridizations involved in PMA, iDMI and spin pumping-induced damping.