Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Abstract

The alternation from bipolar to unipolar resistive switching was observed in perovskite Ba0.7Sr0.3TiO3 thin films. By controlling the switching voltage, either bipolar or unipolar switching was obtained. When the switching voltage is higher than a threshold voltage, the device exhibits unipolar switching while if the switching voltage is lower than a threshold voltage, the device shows bipolar switching behavior. The bipolar-to-unipolar alternation is dynamically repeatable and may be related to the local modification of broken filaments by oxygen vacancy movement.

Demonstration and modeling of multi-bit resistance random access memory

“…Similar (2013) problems (with similar I-V and R-V curves) often exist for other types of RRAM according to the literature. [11][12][13] As described in our previous work, I-V/R-V curves of the above kind can be very satisfactorily and quantitatively modeled by treating the device as a series connection of a load resistance R l and a cell resistance R c (Figure 1(b)). The reader is referred to Ref.…”

Electrical Characterization of Resistive Switching Memories

“…RRAM devices have shown both unipolar and bipolar switching, sometimes in the same material systems. There are even reports on the transition between unipolar and bipolar switching during the operation of the same RRAM devices [11,12]. Although both switching types can be explained (e.g., thermal effect for unipolar switching and electrical reversal for bipolar switching), the exact mechanisms are not understood.…”

Stoichiometry variation for the atomic layer deposition of SrxTiyOz from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O

“…Strontium titanate is widely studied as a model system for ternary transition metal oxides not only for resistance switching memory applications [2][3][4][5] but also for the use as a high k dielectric [6][7][8]. The permittivity of bulk crystalline SrTiO 3 is 285 [9] and around 80 [10] for amorphous thin films.…”