Reverse recovery charge reduction of a power Thyristor (SCR)

Shammas, N.Y.A.; Eio, S.

doi:10.1109/upec.2007.4469085

Cited by 1 publication

(1 citation statement)

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“…The turn-on and turn-off transient behavior of DUT are mainly controlled by the MOSFET transistor instead of using a second thyristor as published in the literature [14], [19], and [20]. To obtain a pertinent thyristor turn-off for the accurate measurements of t q , a fast MOSFET transistor (IRF740) is chosen as a control switch.…”

Section: Test Setup For T Q Measurementmentioning

confidence: 99%

A Novel Approach to Accurately Determine the $t_{q}$ Parameter of Thyristors

Garrab

Jedidi

Morel

et al. 2017

IEEE Trans. Ind. Electron.

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The continued use of high-voltage thyristor devices in industry and their increased use in high-voltage dc transmission systems call for more attention to the properties of these devices. One of the important thyristor parameters is their turn-off time tq, which can be a limiting factor when applying thyristors at elevated switching frequencies. Hence, the accurate measurement of tq and its variation versus the operating conditions remains a crucial task for thyristor converters operating at elevated switching frequencies. In this paper, a proper test circuit for measuring this parameter with a high level of accuracy has been designed and built. Owing to the test circuit specificity, the variation effects of several electrical and physical constraints, such as the forward current, I F , the reverse applied voltage, VR, the operating temperature, T o , and the ramp rate of the forward reapplied voltage, dV D /dt, on the t q parameter of Thyristors are also studied and analyzed based on the physics of semiconductor devices and associated simulations.

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Section: Test Setup For T Q Measurementmentioning

confidence: 99%