2017
DOI: 10.1007/978-3-319-54669-8_4
|View full text |Cite
|
Sign up to set email alerts
|

Reverse Engineering Flash EEPROM Memories Using Scanning Electron Microscopy

Abstract: In this article, a methodology to extract Flash EEPROM memory contents is presented. Samples are first backside prepared to expose the tunnel oxide of floating gate transistors. Then, a Scanning Electron Microscope (SEM) in the so called Passive Voltage Contrast (PVC) mode allows distinguishing '0' and '1' bit values stored in individual memory cell. Using SEM operator-free acquisition and standard image processing technique we demonstrate the possible automating of such technique over a full memory. The prese… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
27
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
4
4
1

Relationship

1
8

Authors

Journals

citations
Cited by 40 publications
(27 citation statements)
references
References 18 publications
0
27
0
Order By: Relevance
“…First, flash memory dumps are becoming extremely difficult because the latest smart speakers have already adopted mitigation such as code protection as mentioned in Section 4. However, the hardware-based attacks are still possible by leveraging Scanning Electron Microscopy (SEM) or glitching attack [Courbon, Skorobogatov and Woods (2016); Giller 2015]. Second, the dolphin attack Zhang et al [Zhang, Yan, Ji et al (2017)] can be launched from several feet away (e.g., distances vary from 2 cm to a maximum value of 175 cm across devices) but portable attack with a smartphone, an ultrasonic transducer and a lowcost amplifier as described in their paper allows the adversary to hide the attack device inside a pocket (or a bag) and to access to a target close enough.…”
Section: Discussionmentioning
confidence: 99%
“…First, flash memory dumps are becoming extremely difficult because the latest smart speakers have already adopted mitigation such as code protection as mentioned in Section 4. However, the hardware-based attacks are still possible by leveraging Scanning Electron Microscopy (SEM) or glitching attack [Courbon, Skorobogatov and Woods (2016); Giller 2015]. Second, the dolphin attack Zhang et al [Zhang, Yan, Ji et al (2017)] can be launched from several feet away (e.g., distances vary from 2 cm to a maximum value of 175 cm across devices) but portable attack with a smartphone, an ultrasonic transducer and a lowcost amplifier as described in their paper allows the adversary to hide the attack device inside a pocket (or a bag) and to access to a target close enough.…”
Section: Discussionmentioning
confidence: 99%
“…Nardi et al [28] solved the challenge of maintaining the value of stored charge by accessing the memory from the back-side of IC. Once an attacker gets access to the floating gate of EEPROM/Flash, she can use scanning Kelvin probe microscopy (SKPM), scanning probe microscopy (SPM), passive voltage contrast (PVC) or scanning capacitance microscopy (SCM) for extracting the stored value in the EEPROM/Flash [28], [29]. However, the security of the 3D Flash chips (see 3D NAND flash cells in Fig.…”
Section: A Vulnerabilities Of the Key-storage Elementmentioning
confidence: 99%
“…Flash/ EEPROM would require more sophisticated methods as the information is stored in the form of electrical charge. That means that either atomic force microscope (AFM) [22] or scanning electron microscope (SEM) [23] will be required. SRAM extraction is the most challenging task, because any interruption of the power supply could result in data loss.…”
Section: Data Retentionmentioning
confidence: 99%