Revealing multi-stage growth mechanism of Kirkendall voids at electrode interfaces of Bi2Te3-based thermoelectric devices with in-situ TEM technique

Lin, Yangjian; Wu, Xinzhi; Li, Yuchen; Cheng, Feng; Liu, Weishu; Ge, Binghui

doi:10.1016/j.nanoen.2022.107736

Cited by 14 publications

(10 citation statements)

References 44 publications

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“…According to the theory of growth kinetics of the interfacial reaction layer, the growth of the interfacial reaction layer is controlled by the reaction when the aging time is short, and the thickness of the interfacial reaction layer has a linear relationship with the aging time. ,, At 0 to 500 h, the previous results show that the contribution of interface contact resistivity is caused by the formation of the NiTe phase . Therefore, we assume that during the aging time of 500 h (about 20.83 days) at 150 °C, the R CN and R CP change linearly with the aging time H , combined with the actual change data of Ni/p-Bi 2 Te 3 and Ni/n-Bi 2 Te 3 interface measured in Figure a and b, respectively; the following relationship can be obtained: R CN = 0.0029 H + 5.304 R CP = 0.0013 H + 0.22 When H = 0 h, that is, in the initial state, the internal resistance of the device should be (1.7985 + R solder ); when H = 100 h, the internal resistance of the device should be (1.8148 + R solder ); and when H = 500 h, the device internal resistance should be (1.8801 + R solder ).…”

Section: Resultsmentioning

confidence: 99%

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Lyu,

Yang,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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The micro thermoelectric device (m-TED) boasts features such as adjustable volume, straightforward structure, and precise, rapid temperature control, positioning it as the only current solution for managing the temperature of microelectronic systems. It is extensively utilized in 5G optical modules, laser lidars, and infrared detection. Nevertheless, as the size of the m-TED diminishes, the growing proportion of interface damages the device's operational reliability, constraining the advancement of the m-TED. In this study, we used commercially available bismuth telluride materials to construct the m-TED. The device's reliability was tested under various temperatures: −40, 85, 125, and 150 °C. By deconstructing and analyzing the devices that failed during the tests, we discovered that the primary cause of device failure was the degradation of the solder layer. Moreover, we demonstrated that encapsulating the device with polydimethylsiloxane (PDMS) could effectively delay the deterioration of its performance. This study sparks new insights into the service reliability of m-TEDs and paves the way for further optimizing device interface design and enhancing the device manufacturing process.

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Section: Resultsmentioning

confidence: 99%

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Lyu,

Yang,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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“…After in situ heating, the interface microstructure was stable and no second phases were formed, suggesting that no reaction occurred (Figure 2b). Furthermore, no Kirkendall voids [ 49 ] or cracks were observed, indicating that the interdiffusion was suppressed. Notably, the gray difference could be attributed to the mass–thickness contrast, while the relatively weak diffraction contrast changes during the heating process were ascribed to the changes in thermal stress (Figure S5, Supporting Information and Movie S1).…”

Section: Resultsmentioning

confidence: 99%

“…After in situ heating, the interface microstructure was stable and no second phases were formed, suggesting that no reaction occurred (Figure 2b). Furthermore, no Kirkendall voids [49] or cracks were observed, indicating that the interdiffusion was [10,31,33,35,36,38,40,45] d) and e) plots of ρ c and σ s versus the root mean square of the aging time at 400°C, showing linear relationships.…”

Section: Increase In the Stability Of Teim/tecm Interfaces Using Fecr...mentioning

confidence: 97%

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices

Lin

Han

et al. 2022

Advanced Energy Materials

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Realizing high‐temperature thermal stability in thermoelectric (TE) generators is a critical challenge. In this study, a synergistic interface and surface optimization strategy is implemented to enhance Mg3Sb1.5Bi0.5 TE generator performance by employing FeCrTiMnMg thermoelectric interface materials and the MgMn‐based alloy protective coating. The competitive output power density (ω) of 1.7 W cm−2 and a conversion efficiency (η) of 13% for the single‐leg device are achieved at hot‐side temperature (Th) and cold‐side temperature (Tc) of 500 and 5 °C, respectively. An ω of 0.8 W cm−2 and η of 6% for the two‐couple TE devices with p‐type commercial Bi2Te3 are also realized, values that are competitive with the commercial Bi2Te3 device. Additionally, the single‐leg device shows a high stable η for over 100 h when the Th and Tc are 400 and 5 °C, respectively, with an change rate (Δηmax/ηmax,o) of <3%. In situ transmission electron microscopy analysis further reveals that the high stability results from the effectively sluggish interdiffusion and reduced Mg evaporation that decrease the chemical potential gradient, reduce the saturated vapor pressure, and increase the diffusion activation energy barrier. This study provides a general technique route for boosting the high‐temperature thermal stability of TE generator.

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“…To guarantee that the relationship between structure and function is understood at the atomic scale with high temporal resolution, quantitative measurements of the composition of material structure and their bonding evolution in technologically relevant environments, including liquids, gases, and plasmas, are necessary for in situ and operando transmission electron microscopy to advance in the future. − Even so, the TEM holder design’s use in batteries for in situ characterization is currently constrained, and there are challenges with data analysis, electrochemical scanning linkage, noise and drift correction, and imaging.…”

Section: Discussionmentioning

confidence: 99%

Imaging the Surface/Interface Morphologies Evolution of Silicon Anodes Using in Situ/Operando Electron Microscopy

Yang

Zhang

et al. 2023

ACS Appl. Mater. Interfaces

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Si-based rechargeable lithium-ion batteries (LIBs) have generated interest as silicon has remarkably high theoretical specific capacity. It is projected that LIBs will meet the increasing need for extensive energy storage systems, electric vehicles, and portable electronics with high energy densities. However, the Si-based LIB has a substantial problem due to the volume cycle variations brought on by Si, which result in severe capacity loss. Making Si-based anodesenabled high-performance LIBs that are easy to utilize requires an understanding of the fading mechanism. Due to its distinct advantage in morphological changes from microscale to nanoscale, even approaching atomic resolution, electron microscopy is one of the most popular methods. Based on operando electron microscopy characterization, the general comprehension of the fading mechanism and the morphology evolution of Si-based LIBs are debated in this review. The current advancements in compositional and structural interpretation for Si-based LIBs using advanced electron microscopy characterization methods are outlined. The future development trends in pertinent silicon materials characterization methods are also highlighted, along with numerous potential research avenues for Si-based LIBs design and characterization.

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Revealing multi-stage growth mechanism of Kirkendall voids at electrode interfaces of Bi2Te3-based thermoelectric devices with in-situ TEM technique

Cited by 14 publications

References 44 publications

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices

Imaging the Surface/Interface Morphologies Evolution of Silicon Anodes Using in Situ/Operando Electron Microscopy

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Revealing multi-stage growth mechanism of Kirkendall voids at electrode interfaces of Bi2Te3-based thermoelectric devices with in-situ TEM technique

Cited by 14 publications

References 44 publications

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg3Sb1.5Bi0.5‐Based Thermoelectric Generation Devices

Imaging the Surface/Interface Morphologies Evolution of Silicon Anodes Using in Situ/Operando Electron Microscopy

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Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices