Revealing capacitive and inductive effects in modern industrial c-Si photovoltaic cells through impedance spectroscopy

Nijen, David van; Muttillo, Mirco; Dyck, Rik Van; Poortmans, Jef; Zeman, Miro; Isabella, Olindo; Manganiello, Patrizio

doi:10.1016/j.solmat.2023.112486

Cited by 9 publications

(5 citation statements)

References 48 publications

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“…1, 1-curve) is in the resistance range 93Ω÷ 128.7 kΩ and has the shape of an arc of a circle, which is typical for the electrode reaction. The section of the diagram in the range from 0 ÷ 93 Ω along the X axis corresponds to the resistance of the electrolyte [13,14].…”

Section: Resultsmentioning

confidence: 99%

Processes of Defect Formation in Silicon Diffusionally Doped With Platinum and Irradiated With Protons

Utamuradov

2023

Eurasian phys. tech. j.

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In this work, we studied the effect of technological regimes and proton implantation on the processes of defect formation in single-crystal n-type silicon (n-Si) doped with platinum using the method of impedance spectroscopy. It has been established that radiation-induced changes in the electrical conductivity of silicon depend significantly on the technological regimes of doping with impurities in silicon. Hodographs show that doping with platinum leads to a decrease in the electrical resistance of silicon samples. Irradiation with 2 MeV protons at a dose of 5.1 × 1014 particles / cm2 leads to a significant (2-3 times) increase in the electrical resistance of the silicon samples under study. It is concluded that the relatively high resistance to radiation exposure (resistance change of no more than 16%: from 55 kΩ to 65 kΩ as a result of ion implantation) of samples doped at 1200°C is presumably due to a higher concentration of impurity ions (platinum) in the samples volume compared to 1100°C.

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Section: Resultsmentioning

confidence: 99%

Processes of Defect Formation in Silicon Diffusionally Doped With Platinum and Irradiated With Protons

Utamuradov

2023

Eurasian phys. tech. j.

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“…This encompasses both NMOS devices on p-type substrates and PMOS devices on n-type substrates. While in solar cells there is a certain flexibility in the choice of substrate dopant density, [24] it is important to acknowledge that for COSMOS devices the choice of substrate has an important effect on certain transistor characteristics, such as the threshold voltage. To achieve better control over the MOSFET characteristics, techniques like epitaxial layer growth or localized doping adjustments through implantation could be considered.…”

Section: Threshold Voltagementioning

confidence: 99%

“…[19][20][21] Another approach aims to exploit the inherent capacitive and inductive properties of solar cells. [22][23][24] On the one hand, the integration of PE components into PV cells includes challenges such as thermal management and repairability. [18] On the other hand, the integration approach includes several significant advantages.…”

Section: Introductionmentioning

confidence: 99%

Combined Fabrication and Performance Evaluation of TOPCon Back‐Contact Solar Cells with Lateral Power Metal‐Oxide‐Semiconductor Field‐Effect Transistors on a Single Substrate

van Nijen,

Stevens,

Mercimek

et al. 2024

Solar RRL

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“…In spite of the relative simplicity of IS as a measurement method, it has not been widely applied to crystalline silicon (c-Si)-based solar cells, especially in modern high-efficiency silicon devices with higher efficiencies. Van Nijen et al demonstrated the use of IS to characterize laminates of different commercial c-Si PV cells, comparing their capacitance at the point of maximum power and inductance associated with the design of the cell metallization [24]. Shehata et al applied the technique to c-Si based solar cells with SiO x /poly-Si back passivating contacts and an efficiency of 21.25% [25].…”

Section: Introductionmentioning

confidence: 99%

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

Aimaganbetov,

Yerezhep,

Kishkenebayev

et al. 2024

Micromachines

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Impedance spectroscopy provides relevant knowledge on the recombination and extraction of photogenerated charge carriers in various types of photovoltaic devices. In particular, this method is of great benefit to the study of crystalline silicon (c-Si)-based solar cells, a market-dominating commercial technology, for example, in terms of the comparison of various types of c-Si devices. This study investigates the dark and light electrophysical characteristics of a heterojunction silicon solar cell fabricated using plasma-enhanced chemical vapor deposition. The measurements are performed at various applied biases, enabling the determination of complex resistance, characteristic time, capacitive response and impurity concentration within the semiconductor junction and to correlate them with the device performance. In addition, the impedance spectra of the studied cell were investigated as a function of temperature. Studies of the frequency and temperature dependences of capacitance do not reveal a significant presence of thermally activated centers of free carrier capture, concomitant with a very small value of the activation energy extracted from an Arrhenius-type analysis. This leads to a conclusion that these centers are likely not impactful on the device operation and efficiency.

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Revealing capacitive and inductive effects in modern industrial c-Si photovoltaic cells through impedance spectroscopy

Cited by 9 publications

References 48 publications

Processes of Defect Formation in Silicon Diffusionally Doped With Platinum and Irradiated With Protons

Processes of Defect Formation in Silicon Diffusionally Doped With Platinum and Irradiated With Protons

Combined Fabrication and Performance Evaluation of TOPCon Back‐Contact Solar Cells with Lateral Power Metal‐Oxide‐Semiconductor Field‐Effect Transistors on a Single Substrate

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy

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