Processes of Defect Formation in Silicon Diffusionally Doped With Platinum and Irradiated With Protons

Abstract

In this work, we studied the effect of technological regimes and proton implantation on the processes of defect formation in single-crystal n-type silicon (n-Si) doped with platinum using the method of impedance spectroscopy. It has been established that radiation-induced changes in the electrical conductivity of silicon depend significantly on the technological regimes of doping with impurities in silicon. Hodographs show that doping with platinum leads to a decrease in the electrical resistance of silicon samples. Irradiation with 2 MeV protons at a dose of 5.1 × 1014 particles / cm2 leads to a significant (2-3 times) increase in the electrical resistance of the silicon samples under study. It is concluded that the relatively high resistance to radiation exposure (resistance change of no more than 16%: from 55 kΩ to 65 kΩ as a result of ion implantation) of samples doped at 1200°C is presumably due to a higher concentration of impurity ions (platinum) in the samples volume compared to 1100°C.

STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

“…The calculations used a three-layer model, including a natural oxide layer, a nearsurface layer and a crystalline silicon substrate (Utamuradova et al, 2023d). For the a b natural oxide layer, the Cauchy and Urbach dispersion model was used (Figure 2) and for the near-surface layer of the samples, the Si parametric model was used (Figure 3).…”