2019
DOI: 10.1007/s10854-019-00717-2
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RETRACTED ARTICLE: Surface morphology, optical properties and Urbach tail of spray deposited Co3O4 thin films

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Cited by 20 publications
(9 citation statements)
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“…Figure 5 ; where R is the reflectance; F(R) is propotional to the absorption coefficient. The obtained curves reveal parabolic band edges that depend on the photon energy and obey Urbachs rule that has been discussed in our previous work [25].…”
Section: Optical Propertiessupporting
confidence: 72%
“…Figure 5 ; where R is the reflectance; F(R) is propotional to the absorption coefficient. The obtained curves reveal parabolic band edges that depend on the photon energy and obey Urbachs rule that has been discussed in our previous work [25].…”
Section: Optical Propertiessupporting
confidence: 72%
“…Urbach energy is calculated by taking the inverse slope of the linear portion of alpha versus photon energy. Urbach energy increases with an increase in the dopant concentration which manifests that the defects of density and structural disorders in the synthesized samples elevates with the Zn content [57][58]. It is distant that the Urbach energy of 0.3 % Zn doped NiO nanoparticles showcase higher quantity in comparison with other less dopant concentrations, inferring that it has generated a significantly higher number of defects.…”
Section: Determination Of Urbach Energy and Electronegativitymentioning
confidence: 82%
“…Photoexcitation into the 400 nm LMCT transition of Co 3 O 4 produces a localized exciton with a Bohr radius of 3.3 Å . The absorption extending from 500 to 900 nm in Co 3 O 4 has been discussed to include contributions from a variety of metal-centered d–d and MMCT transitions. ,, For CoPi, further broadening and weakening of optical absorption from metal-centered transitions in this spectral region have been anticipated due to confinement effects arising from the small domain sizes and contributions from the relatively high proportion of edge and defect sites with coordination geometries that are distorted compared to those in interior lattice sites. ,,, Further, we note that photoconductive activity in wide-band-gap semiconductors can be produced from excitation of localized d – d transitions for impurities that have d -shell states in the mid-gap region . Mechanisms analogous to these might be relevant to consider in CoPi, upon the transition from insulator to semiconductor states that involve edge, defect, or catalytic sites with ligand field distortions.…”
Section: Optical and Electronic Properties Of Copi Under In Situ Elec...mentioning
confidence: 99%