Retention in thin ferroelectric films

Sharma, Bhim S.; Vogel, Stefan; Prentky, P. I.

doi:10.1080/00150197308235781

Cited by 32 publications

(8 citation statements)

References 5 publications

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“…The development of ferroelectric thin films started at the late 1960s and early 1970s when progress in integrated Si devices and thin film processing techniques triggered interest in the use of ferroelectric thin films for fabrication of nonvolatile memories. [1][2][3] Difficulties with ferroelectric materials processing and integration frustrated the attempts to make practical memory devices until the 1980s. The advances in processing of complex ferroelectric oxides at the mid-1980s, 4,5 and perhaps also the discovery of the high temperature superconductive oxides and the subsequent efforts to integrate them onto silicon resulted in a revival of interest in ferroelectric memories, and in 1987, ferroelectric memory integrated with silicon complementary metal-oxide semiconductor ͑CMOS͒ was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric thin films: Review of materials, properties, and applications

Setter

Damjanović²,

Eng³

et al. 2006

Journal of Applied Physics

1,597

1,000

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An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure ͑domains, in particular͒, and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures.

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Section: Introductionmentioning

confidence: 99%

Ferroelectric thin films: Review of materials, properties, and applications

Setter

Damjanović²,

Eng³

et al. 2006

Journal of Applied Physics

1,597

1,000

View full text Add to dashboard Cite

show abstract

“…In addition, internal fields become comparable with external field because of high polarization at this stage. Therefore, the polarization rate at merging stage is expressed as: dPd EL dEA aft (7) where 4 is also an interface related constant.…”

Section: Coementioning

confidence: 99%

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993

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Many attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films.It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization.Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

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“…The temperature at which there is transition of the gradient increases strongly with x . The positive gradients arise from thermally activated loss and the leakage build‐up of free electric charges . For x = 0, we find only a positive gradient component to the plot.…”

Section: Resultsmentioning

confidence: 71%

“…In terms of temporal retention, R ( t ) is defined as

R (t) = ([], 1 normal - normal \frac{normalΔ P_{r}}{P_{r} false(0 false)}) \times 100

where Δ P r is the change in remnant polarization during time, t . With this definition, 100% retention in the ferroelectric element at any t will be observed if Δ P r = P r (0) − P r ( t ), meaning that the state of polarization for the ferroelectric element has not changed.…”

Section: Resultsmentioning

confidence: 99%

Giant Enhancement of Polarization and Strong Improvement of Retention in Epitaxial Ba_0.6Sr_0.4TiO₃‐Based Nanocomposites

Lee

Kuršumović

et al. 2017

Adv Materials Inter

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In Ba0.6Sr0.4TiO3 (BSTO)‐based epitaxial nanocomposite films increased P r values are demonstrated by up to a factor of 3 compared to standard BSTO films. A strongly reduced temperature coefficient of polarization retention is also obtained, i.e., 0.07% °C−1 compared to 0.24% °C−1. Piezopoling with only marginal leakage current is also achieved up to 200 °C, the highest temperature studied. The origin of the improved performance is the incorporation of Sm2O3 nanopillars in the films which acted as stiff vertical nanoscaffolds, inducing a strong tetragonal distortion in the BSTO (up to 1.033(7) in terms of the out‐of‐plane/in‐plane lattice dimensions). The films have comparable performance to industry‐standard Pb(Zr,Ti)O3 films, at the same time as being Pb‐free.

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Retention in thin ferroelectric films

Cited by 32 publications

References 5 publications

Ferroelectric thin films: Review of materials, properties, and applications

Ferroelectric thin films: Review of materials, properties, and applications

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

Giant Enhancement of Polarization and Strong Improvement of Retention in Epitaxial Ba_0.6Sr_0.4TiO₃‐Based Nanocomposites

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Retention in thin ferroelectric films

Cited by 32 publications

References 5 publications

Ferroelectric thin films: Review of materials, properties, and applications

Ferroelectric thin films: Review of materials, properties, and applications

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

Giant Enhancement of Polarization and Strong Improvement of Retention in Epitaxial Ba0.6Sr0.4TiO3‐Based Nanocomposites

Contact Info

Product

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Giant Enhancement of Polarization and Strong Improvement of Retention in Epitaxial Ba_0.6Sr_0.4TiO₃‐Based Nanocomposites