Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Song, Young Suh; Park, Byung‐Gook

doi:10.3390/mi12030328

Cited by 6 publications

(4 citation statements)

References 50 publications

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“…The electron dispersive spectroscopy (EDS) line scans below the TEM images also indicate minimal atomic/interfacial changes. It has been demonstrated that CTM cells exhibit charge retention times over 10 years [92][93][94] . = 1.6, 6.2, 0.25, 29.8 pm, respectively.…”

Section: Charge Trap Memory Experimental Demonstrationmentioning

confidence: 99%

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing Platform

Cheung

Liang

Yuan

et al. 2023

Preprint

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We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice filters, and ring resonator filters. The MZI CTM exhibits full write/erase operation (100 cycles with 500 states) with wavelength shifts of Δλnon-volatile = 1.16 nm (Δneff,non-volatile ~ 2.5 × 10-4) and a dynamic power consumption < 20 pW (limited by measurement). Multi-bit write operation (2 bits) is also demonstrated and verified over a time duration of 24 hours and most likely beyond. The cascaded 2nd order ring resonator CTM filter exhibited an improved ER of ~ 7.11 dB compared to the MZI and wavelength shifts of Δλnon-volatile = 0.041 nm (Δneff,non-volatile = 1.5 × 10-4) with similar pW-level dynamic power consumption as the MZI CTM. The ability to co-locate photonic computing elements and non-volatile memory provides an attractive path towards eliminating the von-Neumann bottleneck.

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Section: Charge Trap Memory Experimental Demonstrationmentioning

confidence: 99%

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing Platform

Cheung

Liang

Yuan

et al. 2023

Preprint

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“…These authors also suggested [50] short O 3 treatment of Si to obtain better Al 2 O 3 /Si interfacial properties. Improvement of retention by the engineering of tunnelling oxide is suggested in the work of Song et al [64]. They demonstrated by using Synopsis simulations that incorporation of Al 2 O 3 in the tunnelling oxide (i.e., SiO 2 /Al 2 O 3 /SiO 2 stack) results in a significant improvement in retention.…”

Section: Tunneling and Blocking Oxidesmentioning

confidence: 99%

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Spassov,

Paskaleva

2023

Nanomaterials

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The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, there are still innovations within the current CMOS technology, which could be implemented to improve the data storage ability of memory cells—e.g., replacement of the current dominant floating gate non-volatile memory (NVM) by a charge trapping memory. The latter offers better operation characteristics, e.g., improved retention and endurance, lower power consumption, higher program/erase (P/E) speed and allows vertical stacking. This work provides an overview of our systematic studies of charge-trapping memory cells with a HfO2/Al2O3-based charge-trapping layer prepared by atomic layer deposition (ALD). The possibility to tailor density, energy, and spatial distributions of charge storage traps by the introduction of Al in HfO2 is demonstrated. The impact of the charge trapping layer composition, annealing process, material and thickness of tunneling oxide on the memory windows, and retention and endurance characteristics of the structures are considered. Challenges to optimizing the composition and technology of charge-trapping memory cells toward meeting the requirements for high density of trapped charge and reliable storage with a negligible loss of charges in the CTF memory cell are discussed. We also outline the perspectives and opportunities for further research and innovations enabled by charge-trapping HfO2/Al2O3-based stacks.

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“…This Special Issue provides insight on and advancements in Flash memory devices. There are nine papers including one review paper, covering the reliability of 3D NAND Flash devices [1][2][3], the characterization and design of Flash memory cell/string [2,4,5], NOR Flash memories for embedded applications [5], a set of Error Correction Codes and Secondary Correction Algorithms for flash memories [6,7], Flash management through flash signal processing in controllers for Big Data storage [6][7][8], and the impact of Flash memories on Solid State Drives reliability and performance [8,9].…”

mentioning

confidence: 99%

“…Moreover, under scaled cell dimensions, the improvement becomes protruding. In [5], Song et al incorporated aluminum oxide in tunnel oxide to improve retention characteristics of NOR flash arrays. By adopting the proposed tunneling layers in the NOR flash array, the threshold voltage window after 10 years from programming and erasing (P/E) was improved by 4 V. The validation of the proposed device structure took place by comparing it with another stacked-engineered structure with SiO 2 /Si 3 N 4 /SiO 2 tunneling layers.…”

mentioning

confidence: 99%

Editorial for the Special Issue on Flash Memory Devices

Zambelli

Micheloni

2021

Micromachines

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Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Cited by 6 publications

References 50 publications

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing Platform

Ultra-Power-Efficient Electrically Programmable Photonic Memory on a Heterogeneous III-V/Si Optical Computing Platform

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks

Editorial for the Special Issue on Flash Memory Devices

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