Results of an electron beam test with prototype silicon sensors manufactured by Infineon Technologies Austria AG

Abstract

The demand on silicon based sensors continuously increased since they have been used the first time in particle physics for tracking purposes. In accordance with this development the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG engaged in a cooperation to develop prototype p-on-n silicon strip sensors. The sensors of two independent batches with slightly varying production processes are evaluated. To investigate their performance, modules have been assembled with an analogue readout chip (APV25) and operated in an electron beam test. An already well-studied problem of poorly isolated strips, restricted to a small region of the sensor could be further investigated at one sensor and has proven to be cured at the others. Therefore charge sharing effects and their dependency on the bias voltage have been investigated on different regions of the sensors. Furthermore the recorded data of the modules, including one gamma irradiated, document the functionality of the devices.

History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

“…From there on, silicon strip sensors were used as tracking detectors in a variety of high energy physics experiments, continuously replacing the prevalent gaseous tracking detectors. 10 The great success of silicon sensors is influenced by the industrialisation of semiconductor processing. Initially, only small specialised companies and academic institutions fabricated silicon sensors for high energy physics applications.…”

“…Four further batches were produced addressing different aspects and issues. The performance of these sensors was demonstrated in various beam tests [9,10]. The main problems of this production were identified as charge-up effects [11].…”

ATLAS pixel upgrade for the HL-LHC

“…These features allow resistive biasing networks and in-pixel AC coupling capacitors to be used, which block the large post-irradiation DC current from the readout chip, reducing its design complexity. Prototypes from high resistivity p-type substrates produced by LFoundry and Infineon [11] are being evaluated and show encouraging results. Sensor thickness between 150 and 200 µm is a reasonable compromise between cost and material for the outer radii, thinner sensors cost more due to low yield or complex processing methods.…”