History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Bergauer, T.; Bartl, U.; Blöch, D.; Döcke, M.; Dragicevic, M.; Hacker, J.B.; Hinger, V.; König, A.; Pree, E.; Valentan, Manfred

doi:10.1016/j.nima.2018.06.069

Cited by 4 publications

(3 citation statements)

References 25 publications

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“…The two identical AC coupled strip sensors are made from high resistive float zone silicon, thinned to a physical and active thickness of 300 μm. The 254 strips per sensor use polysilicon bias resistors and p-stop strip isolation and are approximately 5 cm long with a pitch of 90 μm and a width-to-pitch ratio of 0.25 [10]. The strip geometry is close to the final 2S sensors and therefore also the capacitance seen by the readout chip.…”

Section: The Mini-modulementioning

confidence: 99%

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

et al. 2023

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The Large Hadron Collider (LHC) at CERN will undergo major upgrades to increase the instantaneous luminosity up to 5–7.5×1034 cm-2s-1. This High Luminosity upgrade of the LHC (HL-LHC) will deliver a total of 3000–4000 fb-1 of proton-proton collisions at a center-of-mass energy of 13–14 TeV. To cope with these challenging environmental conditions, the strip tracker of the CMS experiment will be upgraded using modules with two closely-spaced silicon sensors to provide information to include tracking in the Level-1 trigger selection. This paper describes the performance, in a test beam experiment, of the first prototype module based on the final version of the CMS Binary Chip front-end ASIC before and after the module was irradiated with neutrons. Results demonstrate that the prototype module satisfies the requirements, providing efficient tracking information, after being irradiated with a total fluence comparable to the one expected through the lifetime of the experiment.

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Section: The Mini-modulementioning

confidence: 99%

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

et al. 2023

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“…The two identical AC coupled strip sensors are made from high resistive float zone silicon, thinned to a physical and active thickness of 300 𝜇m. The 254 strips per sensor use polysilicon bias resistors and p-stop strip isolation and are approximately 5 cm long with a pitch of 90 𝜇m and a width-to-pitch ratio of 0.25 [10]. The strip geometry is close to the final 2S sensors and therefore also the capacitance seen by the readout chip.…”

Section: The Mini-modulementioning

confidence: 99%

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

Collaboration¹

2022

Preprint

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“…Modern technologies such as 3-D integration often can only be affordably implemented on larger wafers. These needs motivate the development of technologies to move sensor wafer fabrication from 6" to 8" wafers [4].…”

Section: Introductionmentioning

confidence: 99%

200 mm sensor development using bonded wafers

Alyari¹,

Bradford²,

Campanella³

et al. 2021

J. Inst.

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Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to > 200m2 for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than 200 m2 of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than 600 m2. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on 200 mm wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.

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History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Cited by 4 publications

References 25 publications

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

200 mm sensor development using bonded wafers

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