Results of a round robin measurement on a new CD mask standard

Gans, Fritz; Liebe, Roman; Richter, Jan; Schatz, Thomas; Hauffe, Bertram; Hillmann, Frank; Döbereiner, S.; Bruck, H; Scheuring, Gerd; Brendel, B.; Bettin, Lutz; Röth, K.-D.; Steinberg, Walter; Schluter, Gerhard; Speckbacher, Peter; Sedlmeier, W.; Scherübl, Thomas; Häßler-Grohne, Wolfgang; Frase, C. G.; Czerkas, Slawomir; Dirscherl, Kai; Bodermann, Bernd; Mirandé, W.; Bosse, Harald

doi:10.1117/12.637313

Cited by 11 publications

(6 citation statements)

References 9 publications

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“…The measurements at the 5 different dies are than analysed iteratively using these structure width depending thresholds. For high quality photomasks, where due to the good edge quality the single trapezoid is a good approximation, this evaluation method has been applied very successfully and in good quantitative agreement with the PTB SEM results [16].…”

Section: Uv Transmission Microscopymentioning

confidence: 96%

Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask

Gans

Liebe

Heins

et al. 2006

22nd European Mask and Lithography Conference

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Different type of CD metrology instrumentation is in use today for production control of photomasks, namely SEM, AFM as well as optical microscopy and optical scatterometry is emerging, too. One of the challenges in CD metrology is to develop a system of cross calibration which allows a meaningful comparison of the measurement results of the different systems operated within a production environment. Here it is of special importance to understand and also to be able to simulate the response of different metrology instrumentation to variations in sidewall profile of features on photomasks. We will report on the preparation of a special COG test mask with an intended variation of sidewall features and the subsequent metrological characterization of this mask in different type of CD instrumentation. The discussion of the measurement results will be accompanied by a discussion of the simulation of instrument response to feature sidewall variation.

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Section: Uv Transmission Microscopymentioning

confidence: 96%

Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask

Gans

Liebe

Heins

et al. 2006

22nd European Mask and Lithography Conference

Self Cite

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“…The final goal is the equalisation and matching of the various measurement techniques (scatterometry, SEM and AFM) used mainly for CD metrology in the semiconductor industry. To reach this goal it is necessary to realise as a long-range objective, a so-called 'golden' reference standard, which should be useable [22][23][24], these standards are not suitable for scatterometry, particularly because the overall size of the structured areas is too small. Moreover, there is no suitable standard for applications in high-end scatterometry available.…”

Section: Scatterometry Reference Standardmentioning

confidence: 99%

First steps towards a scatterometry reference standard

Bodermann

Hansen²,

Burger³

et al. 2012

SPIE Proceedings

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Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has recently started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology and to establish scatterometry as a traceable and absolute metrological method for dimensional measurements. This requires a thorough investigation of the influence of all significant sample, tool and data analysis parameters, which affect the scatterometric measurement results. For this purpose and to improve the tool matching between scatterometers, CD-SEMs and CD-AFMs, experimental and modelling methods will be enhanced. The different scatterometry methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. To transfer traceability to industrial applications of scatterometry an important step and one final goal of this project is the realisation of different waferbased reference standard materials for calibration of scatterometers. The approaches to reach these goals and first design considerations and preliminary specification of the scatterometry standards are presented and discussed.

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“…Spectroscopic ellipsometry (SE) is a special case of scatterometry that is important for the measurement of nanometric thin films, including multi-layers (see later) [16]. Further research is required to standardize scatterometry techniques and compare them with other optical and contact methods [17,18].…”

Section: Dimensional Nanometrologymentioning

confidence: 99%

The European nanometrology landscape

Leach¹,

Boyd²,

Burke³

et al. 2011

Nanotechnology

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This review paper summarizes the European nanometrology landscape from a technical perspective. Dimensional and chemical nanometrology are discussed first as they underpin many of the developments in other areas of nanometrology. Applications for the measurement of thin film parameters are followed by two of the most widely relevant families of functional properties: measurement of mechanical and electrical properties at the nanoscale. Nanostructured materials and surfaces, which are seen as key materials areas having specific metrology challenges, are covered next. The final section describes biological nanometrology, which is perhaps the most interdisciplinary applications area, and presents unique challenges. Within each area, a review is provided of current status, the capabilities and limitations of current techniques and instruments, and future directions being driven by emerging industrial measurement requirements. Issues of traceability, standardization, national and international programmes, regulation and skills development will be discussed in a future paper.

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Results of a round robin measurement on a new CD mask standard

Cited by 11 publications

References 9 publications

Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask

Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask

First steps towards a scatterometry reference standard

The European nanometrology landscape

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