Response to "Comment on 'Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection'"

Vinal, A.W.; Masnari, N.A.

doi:10.1109/edl.1982.25612

Cited by 8 publications

(1 citation statement)

References 5 publications

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“…Based on the given representation, many valuable results were obtained; however, such approach is not quite correct methodically. Thus, for example, the dominant effect in structures with the transverse axis is uncertain: there are weighty arguments for the deviation [21] and injection modulation effects [22]. The sensitivity of the same structure with the longitudinal axis [23] was explained in [1] by modulation of the transfer coefficient and in [2] by the deviation effect, but Mitnikova et al [23] considered it as a manifestation of the magnetic concentration effect.…”

Section: Continuity Equation and Mechanisms Of Horizontal Tms Sensitimentioning

confidence: 99%

Unified physical and model representation of the magnetosensitive properties of bipolar transistor structures

et al. 2009

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The main physical mechanisms of operation of bipolar semiconductor transistor structures referred to as bipolar magnetosensitive structures (BMS) are analyzed. It is demonstrated that vertical magnetosensitive structures must be excluded from the BMS class, whereas horizontal structures form one class from the viewpoint of model representations irrespective of the direction of their magnetic axis. The mechanisms of BMS sensitivity in which the determining parameter is the mobility of carriers admit a common model representation and hence can be considered as a common redistribution mechanism. The BMS magnetic sensitivity, when estimating its conversion efficiency, is sufficiently correctly described by the one-dimensional continuity equation irrespective of the concrete boundary conditions.

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Section: Continuity Equation and Mechanisms Of Horizontal Tms Sensitimentioning

confidence: 99%