Response of a SINIS Detector with Electron Cooling to Submillimeter-Wave Radiation

Gunbina, A. A.; Lemzyakov, S. A.; Tarasov, M. A.; Édelman, V. S.; Yusupov, R. A.

doi:10.1134/s0021364020100094

Cited by 5 publications

(6 citation statements)

References 13 publications

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“…As mentioned in [30], and shown in Figure 3, at voltages below the superconducting gap, the electron temperature T e at the substrate temperature T∼0.1 K is ∼0.23 K due to overheating caused by spurious radiation. At the substrate temperature T∼0.3 K, the electron temperature is close to the substrate temperature T e ≈ T. In both cases, with an increase in bias voltage, T e decreases due to electron cooling and reaches 0.19 K at a voltage corresponding to the maximum response.…”

Section: Electron Coolingmentioning

confidence: 73%

Microwave SINIS Detectors

et al. 2022

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This review presents the main characteristics and mechanisms of operation of superconductor–insulator–normal metal–insulator–superconductor (SINIS) microwave detectors. An analysis of the detectors’ performance against a quantum detector and a photon counter is given. Methods for cooling a superconductor using normal metal traps and the role of electron cooling in optimizing the current response to terahertz radiation are discussed. Fabrication methods using shadow evaporation as well as magnetron sputtering are described.

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Section: Electron Coolingmentioning

confidence: 73%

Microwave SINIS Detectors

et al. 2022

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“…𝑃 𝐾 = ξ 𝑠(𝑇 𝑝ℎ 4 − 𝑇 4 ), ( 6) where ξ=360 nW/μm 2 K 4 , s is the contact area of the normal electrode with the substrate. This correction in all cases did not exceed 1-2%.…”

Section: W II Experimentalmentioning

confidence: 99%

“…Under stationary conditions and the assumption that a Fermi distribution is established in the system of electrons, the absorbed power can be calculated using the formula for the electron -phonon interaction. In the classic work [3], as well as in [2] and in our earlier paper [4] the following expression was used 𝑃 5 = 𝑃 𝑒−𝑝ℎ = Σ𝑣(𝑇 𝑒 5 -𝑇 𝑝ℎ 5 ).…”

Section: Introductionmentioning

confidence: 99%

Electron-Phonon Interaction in Aluminum SINIS

Lemzyakov¹,

Tarasov

Édelman³

2022

IEEE Trans. Appl. Supercond.

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A detailed analysis of power flow in superconductorinsulator-normal metal-insulator-superconductor (SINIS) structures with aluminum superconducting electrodes and normal metal absorber made of aluminum with suppressed superconductivity is carried out. From a comparison with the experimental results of measuring the current-voltage characteristics at temperatures from 0.087 K to 0.3 K, it was concluded that the power of the electron-phonon interaction is proportional to the difference of sixth powers of the electron and phonon temperatures. The previously applied relation with the difference of fifth powers leads to an almost twofold error in determining the power of the electron-phonon interaction and an estimate of the electron temperature that is underestimated by about 40 mK.

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“…At low resistances of NIS junctions and strong electron cooling, excited electrons are effectively removed from the absorber, their multiplication does not occur, and the current response decreases from dI/dP=e/kT down to dI/dP=e/hf in the case of the so-called cold electron bolometer CEB. The role of electron cooling on the response of SINIS detectors was experimentally investigated in [18], where it was shown that electron cooling does not provide the same sensitivity as the cooling of the receiver as a whole. Current quantum response efficiency for bolometer integrated in a twin-slot antenna [8] is in the range of 0.52-1.1 for signal power 4.8-0.11 pW.…”

Section: Amentioning

confidence: 99%

Non-Thermal Absorption and Quantum Efficiency of SINIS Bolometer

Tarasov

Gunbina

Yusupov

et al. 2021

IEEE Trans. Appl. Supercond.

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We study mechanisms of absorption in two essentially different types of superconductor-insulator-normal metalinsulator-superconductor (SINIS) bolometers with absorber directly placed on Si wafer and with absorber suspended above the substrate. The figure of merit for quantum photon absorption is quantum efficiency equal to the number of detected electrons for one photon. The efficiency of absorption is dramatically dependent on phonon losses to substrate and electrodes, and electron energy losses to electrodes through tunnel junctions. The maximum quantum efficiency can approach n=hf/kT=160 at f=350 GHz T=0.1 K, and current responsivity dI/dP=e/kT in quantum gain bolometer case, contrary to photon counter mode with quantum efficiency of n=1 and responsivity dI/dP=e/hf. In experiments, we approach intrinsic quantum efficiency up to n=80 electrons per photon in bolometer with suspended absorber, contrary to quantum efficiency of about one for absorber on the substrate. In the case of suspended Cu and Pd absorber, Kapitsa resistance protect from power leak to Al electrodes.

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Response of a SINIS Detector with Electron Cooling to Submillimeter-Wave Radiation

Cited by 5 publications

References 13 publications

Microwave SINIS Detectors

Microwave SINIS Detectors

Electron-Phonon Interaction in Aluminum SINIS

Non-Thermal Absorption and Quantum Efficiency of SINIS Bolometer

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