Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Zoutendyk, J. A.; Smith, L. S.; Edmonds, Larry D.

doi:10.1109/23.101199

Cited by 21 publications

(8 citation statements)

References 6 publications

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“…Zoutendyke has experimentally observed and extensively simulated this effect in DRAM structures penetrated by heavy ions [34], [35], as shown in Fig. 4.…”

Section: Multiple Bit Errorsmentioning

confidence: 94%

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Massengill

1996

IEEE Trans. Nucl. Sci.

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A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit informatidn loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed.

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“…Zoutendyke has experimentally observed and extensively simulated this effect in DRAM structures penetrated by heavy ions [34], [35], as shown in Fig. 4.…”

Section: Multiple Bit Errorsmentioning

confidence: 94%

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Massengill

1996

IEEE Trans. Nucl. Sci.

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“…A single normally incident heavy ion has been shown to cause SEMUs in SRAMS [10,11,12] and DRAMs [13,14,15,161. In all cases, it was concluded that the diffusion of charge to at least one junction was the cause of the SEMUs.…”

Section: Introductionmentioning

confidence: 99%

Heavy ion and proton-induced single event multiple upset

Reed

Carts

Marshall

et al. 1997

IEEE Trans. Nucl. Sci.

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Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to singleparticle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states.Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees.

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“…[3,4] The authors employed a bitmap to identify the MBU's. They also reported on the dependence of the MBU multiplicity on ion LET and on supply voltage.…”

Section: Discussionmentioning

confidence: 99%

“…MPTB also provides the addresses of all the memory cells that upset, and, together with the bitmap, it is possible to determine their spatial relationship. Four recognized mechanisms responsible for MBU's are; i) charge diffusion away from an ion track and collection by adjacent SEU-sensitive nodes [3,4], ii) charge collected from an ion track passing through the circuit just below the surface and intersecting a number of memory cells in a straight line [ 5 ] , iii) ion strikes to control circuitry [6], and iv) proton-induced recoils and reaction products. All four of these mechanisms have been invoked to explain the origins of MBU's observed in the DRAM's and SRAM's on board MPTB.…”

Section: Introductionmentioning

confidence: 99%

Investigation of single-ion multiple-bit upsets in memories on board a space experiment

Buchner¹,

Campbell²,

Meehan³

et al.

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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Multiple-bit upsets were observed in two types of memories operating in the radiation environment of space. They have been categorized according to their orbital location, amount of shielding and upset multiplicity. The mechanisms responsible have been identified from ground testing of identical memories using both energetic ions and pulsed laser light. With the aid of bit-maps (generated with the pulsed laser) multiple-bit upsets could, in most cases, be attributed to one of three mechanisms, i.e., charge diffusion away from an ion strike, an ion strike to control circuitry, and an ion track intersecting a number of memory cells. Heavy-ion strikes to peripheral circuits on the memory chip generated multiple-bit upsets involving as many as twenty-one cells. Proton-induced multiple-bit upset rates have been calculated for the spacecraft orbit, and the results show good agreement with measured rates.

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Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Cited by 21 publications

References 6 publications

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Heavy ion and proton-induced single event multiple upset

Investigation of single-ion multiple-bit upsets in memories on board a space experiment

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