Resonant tunnelling delta sigma modulator suitable for high-speed operation

Maezawa, Koichi; Sakou, M.; Matsubara, W.; Mizutani, Takashi

doi:10.1049/el:20063215

Cited by 13 publications

(8 citation statements)

References 3 publications

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“…The applications of the RTD oscillators are not limited to the THz sources. Sensor applications are also attractive because one can use the frequency delta-sigma modulation (FDSM) technique, which is a superior analog/digital conversion technique [6][7][8][9][10][11]. The FDSM employs an variable frequency oscillator to covert the input analog signal to 1-bit pulse density modulation (PDM) digital signal.…”

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confidence: 99%

Experimental demonstration of strain detection using resonant tunneling delta‐sigma modulation sensors

Takumi

Mori

Maezawa

2016

Physica Status Solidi (a)

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A strain sensor was fabricated based on a resonant tunneling diode (RTD) oscillator. This sensor uses strain‐dependent frequency change of the RTD oscillator, and the frequency delta‐sigma modulation technique, which can convert a frequency to a digital signal with wide dynamic range and wide bandwidth. The sensor consists of an oscillator using an LC resonator and an RTD loaded on a beam of the cantilever. The cantilever was fabricated using selective wet etching of the InP substrate. In this sensor, the strain applied to the cantilever changes the current–voltage characteristics of the RTD due to the piezoelectric effect, and hence it changes the oscillation frequency. In this paper, it was demonstrated that the acoustic strain signal can be successfully detected by this sensor with noise shaping behavior, which is a unique nature of the delta‐sigma modulation.

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confidence: 99%

Experimental demonstration of strain detection using resonant tunneling delta‐sigma modulation sensors

Takumi

Mori

Maezawa

2016

Physica Status Solidi (a)

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“…Recently, the negative differential resistance (NDR) devices had been applied to many analog and digital circuits including logic circuit, memory circuit, frequency multiplier and divider, multiplexer and demultiplexer, delta sigma modulator, voltage-controlled oscillator, flip-flop circuit, and differential comparator [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Most of the NDR-based applications are utilized the resonant tunneling diode (RTD) as the basic device.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

Gan

Tsai

Liang

2009

Analog Integr Circ Sig Process

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We investigate four novel negative-differentialresistance (NDR) circuits using the combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By suitably designing the parameters, we can obtain the K-or N-type currentvoltage (I-V) curve. Especially, the peak current of the combined I-V curve could be easy adjusted by the external voltage. In application, we utilize the NDR circuit to design an inverter circuit based on the monostable-bistable transition logic element. The fabrication of these NDR circuits and applications could be completely implemented by the simple and standard Si-based CMOS or SiGe-based BiC-MOS process without using the complex and expensive process such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

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“…The negative differential resistance (NDR) devices and circuits have been widely studied in many applications including the logic circuit [1][2][3], memory circuit [4][5][6][7], oscillator [8], analog-to-digital converter [9], frequency divider [10,11], flip-flop circuit [12,13], delta sigma modulator [14], and cellular neural network [15]. Especially the multiple-peak NDR circuit is a suitable element to apply to the multiple-valued memory (MVM).…”

Section: Introductionmentioning

confidence: 99%

Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

Gan

Tsai

Liang

2008

Analog Integr Circ Sig Process

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A novel multiple-selected and multiple-valued memory (MSMVM) design using the negative differential resistance (NDR) circuits is demonstrated. The NDR circuits are made of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). During suitably designing the parameters and connecting three MOS-HBT-NDR circuits, we can obtain the three-peak current-voltage (I-V) curves with different peak currents in the combined I-V characteristics. For the traditional resonant-tunneling-diode (RTD) memory circuit, one can only obtain four-valued memory states using a constant current source to bias the three-peak NDR circuit. However in this paper, we utilize two switch-controlled current sources to bias the threepeak NDR circuit at different current levels. By controlling the switches on and off alternatively, we can obtain the four-valued, three-valued, two-valued, and one-valued memory levels under the four different conditions. Our design is based on the standard 0.35 lm SiGe BiCMOS process.

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Resonant tunnelling delta sigma modulator suitable for high-speed operation

Cited by 13 publications

References 3 publications

Experimental demonstration of strain detection using resonant tunneling delta‐sigma modulation sensors

Experimental demonstration of strain detection using resonant tunneling delta‐sigma modulation sensors

Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

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