Resonant tunneling through a self-assembled Si quantum dot

Fukuda, M.; Nakagawa, Kazuyuki; Miyazaki, Seiichi; Hirose, Masataka

doi:10.1063/1.118816

Cited by 103 publications

(42 citation statements)

References 9 publications

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“…This, and the fact that we do not have evidence here (at room temperature) for the effect of quantum confinement on the transport, suggests (in view of our CS data), that the charging rather than resonant tunneling is the dominant inhibitor to the transport. This conclusion is further supported by considering the many works that are consistent with that picture and the fact that only very few works suggested the observation of resonant tunneling in Si QDs [30,31]. In that context an extremely important observation in the present work is that our I-t relaxation characteristics and our I-V hysteresis results on the present 3D QDs systems are very similar to results observed by others for 1D [32] and 2D [20,21] arrays of QDs.…”

Section: Discussionsupporting

confidence: 93%

Electrical transport mechanisms in ensembles of silicon quantum dots

Balberg

2008

Phys. Status Solidi (c)

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We provide an overview of the way in which different approaches to nanostructuring metals can lead to a wealth of interesting optical properties and functionality through manipulation of the plasmon modes that such structures support, a field known as plasmonics. The increasing interest in plasmonics derives in large measure from the interplay between better fabrication techniques and an awareness of the potential that controlled plasmon modes have to offer. The combination of nanometer‐scale fabrication techniques and increasingly sophisticated numerical modeling capabilities thus enables a significant advance in our understanding of the science underlying plasmonics. Here, we survey some of the different structures that have been explored. We hope that this Review will spur others to continue the exploration of this fascinating topic.

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Section: Discussionsupporting

confidence: 93%

Electrical transport mechanisms in ensembles of silicon quantum dots

Balberg

2008

Phys. Status Solidi (c)

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“…4) Silicon on insulator (SOI) 5) was first used for studying RT in Si, and negative differential conductance (NDC) was observed at low temperature. RT through a two-dimensionally confined structure has also been reported recently using a nanocrystalline silicon quantum disc, 6) and NDC has been observed at room temperature. Quantum-dot-based IC technology is predicted to become the most basic component of ultra-scaled semiconductor devices.…”

Section: Introductionmentioning

confidence: 90%

Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot

Surawijaya

Mizuta

Oda

2006

jjap

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Electron tunneling is investigated experimentally and theoretically for a single nanocrystalline silicon quantum dot with a diameter of less than 10 nm. Nanocrystalline silicon quantum dots are deposited by very high frequency (VHF) plasma chemical vapor deposition (CVD) sparsely over the oxide-covered silicon substrate. The dots are then naturally oxidized at room temperature by exposing it to ambient air, resulting in an ultrathin oxide tunnel barrier. A current peak is clearly observed at room temperature with the highest peak-to-valley current ratio of about 17 by contact-mode atomic force microscopy (AFM). We also perform three-dimensional numerical simulations of the transmission spectrum and tunneling current based on the scattering matrix theory. In the current-voltage (I-V) characteristics calculated at room temperature we demonstrate the resonant tunneling current peaks associated with the quasi-bound state formed in a spherical silicon quantum dot.

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“…Negative differential conductance (NDC) in Si double barrier structure due to resonant tunneling has been observed [5], [6]. Room temperature NDC in a self-assembled Si quantum dot has also been reported [7].…”

Section: Introductionmentioning

confidence: 94%