Resonant tunneling in periodic multiple-barrier structures with compound-barrier unit

Generalized-barrier parameters for single-barrier structures and resonance width in asymmetrical double-barrier structures

“…We have derived the generalizedbarrier parameters (i.e. T (1+2) , θ (1+2),L and θ (1+2),R ) for the compound single-barrier in [13].…”

“…The generalized-barrier parameters method was proposed for the first time [10,11] and used to obtain simple expressions of the transmission coefficients and the resonance conditions in double-, triple-and multiple-barrier structures with arbitrary potential profiles [11][12][13]. Furthermore, both the generalized-barrier parameters method and the analytical expressions such as the transmission coefficients and the resonance conditions obtained in [11][12][13] are valid for studying optical multilayer thin-film structures, in which no Coulomb interaction exists. Quantum-mechanical electron waves in semiconductors and electromagnetic optical waves in dielectrics exhibit transmission, reflection, interference and diffraction characteristics which are analogous to each other [16,17].…”

Theoretical study of resonance phenomena in n‐fold non‐periodic barrier structures

“…Equations (17) and (21) are simple expressions of transmission coefficient and resonance condition for the n-fold periodic barrier structures [7]. …”

“…Analytical and simple expressions of the transmission Coefficient and the resonance condition for an n-fold barrier structure with identical and rectangular barriers have been reported [2, 31. The n-fold barrier structure with identical compound-barriers have been also investigated, which allow both the sub-band gap energy and the energy value at the center of the sub-band gap to be determined independently [7]. However, when an electric field is applied to these structures, the periodic feature of the structures cannot be retained and the value of the resonant transmission coefficient is reduced.…”

Resonance condition for asymmetrical triple-barrier structures

“…Since the pioneering work by Esaki et al [1,2], the resonant tunnelling in semiconductor heterostructures has been studied extensively [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. The triple-barrier structure is the simplest multiple-barrier structure which allows us to understand the interaction between two wells.…”