Resonance condition for asymmetrical triple-barrier structures

Zhao, Xuebing; Yamamoto, Hiroaki; Nakano, Yu; Taniguchi, Koichi

doi:10.1006/spmi.1996.0163

Cited by 2 publications

(1 citation statement)

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“…Research has also been carried out extensively on asymmetric triple-barrier structures in which three barriers have different potential profiles. Most of the research has involved matrix calculations based on the transfer matrix method [7][8][9][10] or on the WKB method [11], and analyses of the case of rectangular potential structures [12][13][14]. With regard to the analytical expression of the tunneling transmission coefficient and its resonant condition for structures in which the potential is slanted by the electric field, there are reports on double-bar-rier structures [15,16].…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of resonant tunneling in triple‐barrier structures under electric fields

Arakawa

Yamamoto²,

Tanaka³

et al. 2002

Electron Comm Jpn Pt II

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SUMMARYAssuming a practical device application of resonant tunneling in a triple-barrier structure, equations for theoretical analysis of the tunneling transmission coefficient and the resonance condition are derived with regard to the tunneling phenomena in asymmetric triple-barrier structures in the presence of an applied bias. From the numerical analysis results, an interesting phenomenon not observed in structures with two or fewer barriers is found. As the bias voltage is increased, the transmission peak value of the resonant spectrum, which initially decreases, begins to increase again and several peaks with a spectral value of 1 (unity resonance) appear. At that time, the resonance condition is studied. Further, the effect of the tunneling transmission characteristics of triple-barrier structures on the voltage-current relationship in a triple-barrier resonant tunneling diode is studied. By means of the equations derived here, the resonant bias voltage in the triple-barrier structure can be determined. The conclusions derived in this paper are considered useful for the design of resonant tunneling devices using triple-barrier structures.

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