Resonant tunneling in coupled quantum dots

Fong, C. Y.; Nelson, J. S.; Hemstreet, L.A; Gallup, R. F.; Chang, L. L.; Esaki, L.

doi:10.1103/physrevb.46.9538

Cited by 18 publications

(12 citation statements)

References 23 publications

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“…Semiconductor SLs prepared by the technique of molecular beam epitaxy (MBE) exhibit defect-free atomically abrupt interfaces and precisely controlled compositional and doping profiles over distances as small as tens of angstroms. At the same time, the question as to how RCT can be preserved in a structure exhibiting partial disorder remains important both for academic interest in quantum structures and for practical quantum device applications [4][5][6][7][8][9]. Thus, a system with a controlled degree of disorder, combining, for example, a periodic potential in the Z-direction (i.e., the growth direction) with the presence of grain boundaries separating nanocrystals laterally in the XY -plane, would form a special case of general interest.…”

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confidence: 99%

Resonant tunneling in partially disordered silicon nanostructures

Tsybeskov¹,

Grom²,

Krishnan³

et al. 2001

Europhys. Lett.

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Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

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confidence: 99%

Resonant tunneling in partially disordered silicon nanostructures

Tsybeskov¹,

Grom²,

Krishnan³

et al. 2001

Europhys. Lett.

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“…7 Transport through coupled quantum dots is also expected to be strongly influenced by the quantization of the energy levels of the individual dots. [10][11][12][13][14][15][16][17] This is because the tunneling between the two dots is primarily elastic, requiring the energy state of one dot to align with the energy state of the other for conduction. Interdot tunneling, and hence transport through the entire system, should thus be a sensitive function of the alignment of the quantum levels of the dots.…”

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confidence: 99%

Influence of energy level alignment on tunneling between coupled quantum dots

et al. 1996

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We have measured the nonlinear transport properties of two GaAs/Al x Ga 1Ϫx As quantum dots connected in series. At high source-drain bias the Coulomb oscillations develop a sharp overstructure. The behavior of this overstructure is studied as a function of the electrostatic potentials of the dots. The structure is shown to arise from the modulation of interdot tunneling that occurs as the quantum levels in the two dots are aligned and dealigned.

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“…Focused ion beam implantation can also be used to define structures containing quantum dots [8]. Using triple barrier RTDs as starting structure, tunneling processes in coupled quantum dot structures have also been investigated experimentally [9] and theoretically [10][11][12]. The fine structure of the current-voltage characteristic [13] in the above experiments can be explained by strong coupling between 1D subbands in the contact region and 0D states inside the quantum dots.…”

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confidence: 98%