Resonant tunneling current calculations using the transmission matrix method

Zebda, Y.; Kan'an, A.M.

doi:10.1063/1.351888

Cited by 26 publications

(13 citation statements)

References 12 publications

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“…However, the possible variations in the width and in the height of the biased double barrier structure are taken into account only in a very simple way and the effective--mass variation in the double barrier structure is fully lost in this approach. Still, similar numerical results were obtained for more realistic model of the biased double barrier structure [1][2][3].…”

Section: Discussionsupporting

confidence: 64%

“…The numerical values used throughout the calculation, the effective mass m of the transmitting particle and the Fermi energy E F , correspond to GaAs, while the strength g of the delta-barriers to Al 1−x Ga x As, vide e.g. [1][2][3]. The calculation can easily be extended to other similar sandwich structures.…”

Section: Discussionmentioning

confidence: 99%

“…The GaAs/Al 1−x Ga x As system is the most known sandwich structure owing to the relative easiness of its fabrication as well as its close lattice matching [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…As a matter of fact, the most accurate method of computing the tunnelling current through the biased double-barrier structure is based on the exact solution of the Schrödinger wave equation for the piecewise linear potential-energy function ( [1][2][3]12] and references cited therein). Usually, the effective-mass approximation with the quadratic momentum-energy relation is supposed to be valid in solving a transmission problem.…”

Section: Introductionmentioning

confidence: 99%

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On Resonant Tunnelling in the Biased Double Delta-Barrier

Yanetka

2009

Acta Phys. Pol. A

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The solution of the one-dimensional Schrödinger wave equation is presented for the potential-energy function that describes a double delta-barrier under the application of a constant electrical field perpendicular to it. The transfer matrix technique is employed to determine the transmission coefficient in an analytical form. Some attributes of the transmission coefficient are established. The transmission coefficient is shown to exhibit maxima and minima, the conditions for maxima and minima in the transmission coefficient are discussed. The current-voltage characteristic of the biased double delta-barrier is calculated numerically. It is found to exhibit the same oscillatory behaviour as the transmission coefficient when the voltage applied to the double delta-barrier is increased. The width of the double delta-barrier is shown to modulate the peak-to-valley ratio in the current-voltage characteristic.

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Section: Discussionsupporting

confidence: 64%

Section: Discussionmentioning

confidence: 99%

“…The GaAs/Al 1−x Ga x As system is the most known sandwich structure owing to the relative easiness of its fabrication as well as its close lattice matching [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On Resonant Tunnelling in the Biased Double Delta-Barrier

Yanetka

2009

Acta Phys. Pol. A

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“…An electron in a state deep inside the well needs more time to tunnel through the barriers than one in a state closer to the surface of the well, which is an indication of the time-energy uncertainty relation. It is also interesting to note that the effects of a localized impurity sheet in the well on resonant tunneling for the double-barrier structure are similar to the case of triple-barrier structures, where two adjacent quantum wells are separated by an ultrathin barrier that allows tunneling of electrons between the wells, as reported in [8,12]. The energy splitting decreases as the height of the middle thin barrier increases.…”

mentioning

confidence: 70%

Effects of Scattering on Resonant Tunneling in Double‐Barrier Structures

Chen

1995

Physica Status Solidi (b)

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Resonant tunneling through superlattice and multiquantum-well heterostructures has attracted considerable attention recently because of its possible application in ultrahighspeed electronic devices. The technique for atomic layer doping, &doping, is currently the subject of experimental and theoretical studies, as it can provide very high electronic sheet densities with enhanced low-field mobility in compound semiconductors [l]. For a GaAs/Al,Ga,-,As heterostructure as an example, Si or Be sources can be used for such doping layers [2]. The charcteristics of resonant tunneling diodes and the mechanism of the electron tunneling are strongly affected by the doping profile of the structures, so it is interesting to investigate these modified structures.Recently, Beltram and Capasso [3] and Ihm et al. [4] have shown that enormous changes in the electronic states of a superlattice can be made by introducing spatially localized defects with a periodic array in the well layers as well as in the barrier layers of a superlattice.They also found that the creation of a band or the annihilation of a given band and the control of the miniband gap, band positions, and their widths are possible by adjusting the weight and the inserted defects. More recent calculations done by Arsenault and Meunier [5] have shown that the resonant energy of a &doped carrier has a larger width than an identical double-barrier structure. Very recently, Pandey et al.[6] and Gu et al. [7] have shown that with a scattering center in the well, the transmission probability and the resonance energies may change and interesting effects are exposed. However, they all assumed an equal effective mass for the barrier and the well regions and have not obtained analytical expressions for the transmission probability and the resonance condition, although this is necessary for the analysis and prediction of experimental results for the doped double-barrier structures.In this note, we present calculations on the resonant tunneling through a double-barrier structure with an impurity sheet in the middle of the well, we use a &function to describe the scattering perturbation potential of the impurity sheet. Along with the analytical expressions for the transmission probability and the resonance condition, which properly account for the mass profile of this structure, the effect of the scattering on transmission probability and the resonance energy have been numerically calculated as well. It is found that the effects of scattering reduce the transmission probability and broaden the transmission peaks, and all these effects depend strongly on the scattering strength of the impurity sheet. Our calculations also show that the impurity sheet may be an additional growthcontrolling parameter and can be used to modify the energy structure of the quantum well.I ) Lanzhou 730000, People's Republic of China.

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Electron wave propagation in potential structures with δ‐type potentials

Sanada

Ren

Nagai

1995

Electron Comm Jpn Pt II

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With the recent advances in fine‐structure fabrication technology for semiconductors, it is now possible to fabricate a potential structure in which the wave nature of the electrons can be utilized. The wave phenomena caused in such structures are important as they become the operating principle of the device making use of the quantum effect. Therefore, much research has been carried out for the behaviors of the electron waves in potential structures with various shapes. In this paper, the behavior of the electron waves in a one‐dimensional potential including a δ‐type potential is analyzed by means of the equivalent circuits. In addition, the synthesis of the transmission characteristics by making use of this method is investigated. By carrying out synthesis of the resonant levels in a single barrier structure and a structure containing δ‐type potentials in a double barrier, the resonant characteristics are compared with those obtained from the conventional double barrier and quadruple barrier. Further, a synthesis of an electron wave filter is studied by means of a structure made of δ‐type potentials placed regularly in a flat potential. It is shown that a similar transmission characteristic can be synthesized with a simpler synthesis procedure than the method in which a multilayer combination of quarter‐wavelength layers is used.

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Resonant tunneling current calculations using the transmission matrix method

Cited by 26 publications

References 12 publications

On Resonant Tunnelling in the Biased Double Delta-Barrier

On Resonant Tunnelling in the Biased Double Delta-Barrier

Effects of Scattering on Resonant Tunneling in Double‐Barrier Structures

Electron wave propagation in potential structures with δ‐type potentials

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