Resonant Raman Scattering in Boron-Implanted GaN

Abstract

A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak associated with GaN before B-ion implantation and RTA treatment. The PL signal decreased significantly after the B-ion implantation and RTA treatment. The analysis of temperature-dependent Raman spectroscopy data indicated the activation of two transitions in B-ion-implanted GaN in different temperature ranges with activation energies of 66 and 116 meV. The transition energies were estimated in the range of 3.357–3.449 eV through calculations. This paper introduces a calculation method that can be used to calculate the activation and transition energies, and it further highlights the strong influence of B-ion implantation on the luminesce of GaN.

Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

“…Thus, sample A has the smallest damage, and sample D has the largest damage. Since it is known that there is a positive correlation between the amount of ionic dosage and the density of point defects, [23][24][25][26] a sample with a larger dose concentration is expected to have a larger nonradiative recombination rate. Figure 1 shows the PL spectra at RT for the four samples.…”