Resonant Grating-Enhanced Black Phosphorus Mid-Wave Infrared Photodetector

Abstract

Black phosphorus (BP) has emerged as a promising materials system for mid-wave infrared photodetection because of its moderate bandgap, high carrier mobility, substrate compatibility, and bandgap tunability. However, its uniquely tunable bandgap can only be taken advantage of with thin layer thicknesses, which ultimately limits the optical absorption of a BP photodetector. This work demonstrates an absorption-boosting resonant metal−insulator−metal (MIM) metasurface grating integrated with a thin-film BP photodetector. We designed and fabricated different MIM gratings and characterized their spectral properties. Then, we show that an MIM structure increased room temperature responsivity from 12 to 77 mA W −1 at 3.37 μm when integrated with a thin-film BP photodetector. Our results show that MIM structures simultaneously increase mid-wave infrared absorption and responsivity in a thin-film BP photodetector.

Highly Sensitive Broadband Bolometric Photodetectors based on 2D PdSe2 Thin Film

“…However, the low absorptivity of graphene often leads to poor responsivity, constraining its wide applications in photodetectors. [6] Semiconducting 2D materials with high light absorptivity, such as transition metal dichalcogenides (TMD), [7,8] black phosphorene (BP), [9,10] and Bi 2 O 2 Se, [11,12] etc., are encouraging for high-performance photodetectors. Nevertheless, the band gaps of most TMDs are large, and photodetectors made from TMD can only work in the VIS or near-infrared (NIR) band range.…”

Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

“…[ 4–8 ] They have manifested a series of advantages including naturally‐passivated surface, thickness/strain/torsion‐regulated bandgap, excellent in‐plane carrier mobility, Si‐complementary metal‐oxide–semiconductor processing compatibility, outstanding flexibility, etc. Thus far, hundreds of 2DLMs have been explored including elemental semiconductors and their derivatives, [ 9–13 ] nitrides, [ 14 ] phosphides, [ 15,16 ] transition metal dichalcogenides, [ 17–28 ] post transition metal chalcogenides, [ 29–35 ] transition metal halides, [ 36–38 ] solid solutions, [ 39 ] multi‐element compounds, [ 40–56 ] topological insulators, [ 57,58 ] alloys, [ 59 ] etc. Their bandgap values range from 0 up to 6 eV, theoretically enabling them to meet the diverse practical applications in various wavebands.…”

“…[4][5][6][7][8] They have manifested a series of advantages including naturally-passivated surface, thickness/strain/torsion-regulated bandgap, excellent in-plane carrier mobility, Si-complementary metal-oxidesemiconductor processing compatibility, outstanding flexibility, etc. Thus far, hundreds of 2DLMs have been explored including elemental semiconductors and their derivatives, [9][10][11][12][13] nitrides, [14] phosphides, [15,16] transition metal dichalcogenides, [17][18][19][20][21][22][23][24][25][26][27][28] post transition metal chalcogenides, [29][30][31][32][33][34][35] transition metal halides, [36][37][38] solid solutions, [39] multi-element compounds, [40][41][42][43][44][45][46][47][48][49][50]…”

From highly oriented bulk black arsenic phosphorus to well-crystallized exfoliated flakes with enhanced anti-oxidation: precise control upon chemical vapor transport

“…18,19 Meanwhile, b-AsP possesses anisotropic photoelectric properties and higher theoretical room-temperature carrier mobility (B14 000 cm 2 V À1 s À1 ) than transition metal dichalcogenides. 20 Some exciting applications of b-AsP have been reported based on its intriguing properties, such as field effect transistors, 21 photoconductors, [22][23][24] midwave infrared photodetectors, [25][26][27] silicon photonic microheaters, 28 lithium ion batteries, 29 solar exciton batteries, and lasers. 20,30,31 Based on its outstanding physical properties and photoelectric characteristics, 2D b-AsP is a promising candidate for application in midwave infrared photodetection.…”