Resonant Energy Transfer between Localized Electronic States in a Crystal

Soules, Thomas F.; Duke, C. B.

doi:10.1103/physrevb.3.262

Cited by 185 publications

(86 citation statements)

References 39 publications

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“…Non-radiative transitions have many effects beyond carrier capture and competition with luminescence, and the dramatic phenomena of recombination-enhanced processes and persistent photoconductivity show this clearly. A further example, following the same principles, is that of energy transfer (see, for example, Knox 1968, Dexter et al 1969, Soules and Duke 1971. Again one finds a lattice factor precisely parallel to the function G(E) of 52.…”

Section: Special Cases Of Non-radiative Transitionsmentioning

confidence: 99%

“…Rebsch (1979) has discussed the multiphonon enhancement for processes involving one bound and two free carriers. Another impurity case is energy transfer between defects, well-known for many years (Dexter et a1 1969, Soules andDuke 1971) and involving theory closely resembling that of $2. Indeed, the main difference comes from the fact that each defect has accepting modes of its own, so the lineshape function G(w, T ) is replaced by a convolution of two lineshape functions.…”

Section: Impurity-associated Auger Processesmentioning

confidence: 99%

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Non-radiative transitions in semiconductors

1981

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Non-radiative transitions affect many aspects of semiconductor performance. Normally they reduce device efficiency by suppressing luminescence, creating defects, reducing carrier lifetimes, or enhancing diffusion during operation. The present review surveys both the theoretical and practical understanding of non-radiative transitions. It includes general theoretical results and the associated ideas, with the emphasis on phonon-induced and defect Auger processes. Most of the purely formal aspects are omitted, but the points of principle where uncertainties remain are discussed. The review also covers the relation between basic theoretical studies and practical applied work on device degradation. This includes a description of the atomic processes involved in the more important mechanism of device deterioration and the theoretical understanding of the mechanism of these underlying processes. Finally, there is a survey of models proposed for 'killer' centres.

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Section: Special Cases Of Non-radiative Transitionsmentioning

confidence: 99%

Section: Impurity-associated Auger Processesmentioning

confidence: 99%

Non-radiative transitions in semiconductors

1981

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“…The probability of the direct process depends strongly on the so-called coherence factor iexp(i~,)-112 (ref. [25]). In order to calculate this coherence factor one needs to know the Debye temperature of the compound.…”

Section: Discussionmentioning

confidence: 99%

Luminescence and energy migration in a two-dimensional system: NaEuTiO4

Berdowski

Blasse

1984

Journal of Luminescence

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Energy transfer processes in compounds NaGd1~Eu~TiO4(0 cx~1) have been evaluated. It is shown that in these compounds energy migration to quenching centres occurs down to the lowest temperatures if x > 0.3. Transfer from intrinsic Eu 3~ions to extrinsic Eu3 + ions has been observed. The nature of quenching centres and trap centres has been clarified. The characteristics of the energy migration processes can be explained using a two-dimensional diffusion model. The temperature dependence of the hopping rate can be explained assuming phonon-assisted energy transfer.

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“…31; the electronic matrix element was calculated from the natural fluorescence lifetime f using the expression for the transition dipole moment m 2 ϭ3h 4 c 3 /64 4 nE o question of coupled modes and assume that the vibrations associated with each molecule are independent; a detailed discussion of these aspects can be found in Ref. 8.…”

Section: Small Polaron Treatment Of the Fö Rster Transfer Ratementioning

confidence: 99%

“…The celebrated Förster-Dexter theory 1,2 has been used with success to explain a wide range of phenomena, including the energy transport in photosynthesis, 3 molecular beacons, 4 as well as applications to modern optoelectronic devices. 5 Complementing the Förster-Dexter theory, the multiphonon theory of resonance energy transfer 6 -developed in parallel with the theories of intermolecular electron transfer 7 -was applied with success to energy transfer in molecular crystals 8 and photosynthetic light harvesting. 9 In a simplified two-phonon form, 10,11 this theory has achieved a particular success, projecting a compromise between the complexity of the full problem and the desire to obtain an analytical solution.…”

Section: Introductionmentioning

confidence: 99%

Polaron-exciton model of resonance energy transfer

Markvart

Greef²

2004

The Journal of Chemical Physics

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It is shown that Förster's expression for the electronic energy transfer rate can be recast in a form predicted for exciton motion that interacts strongly with molecular vibrations. Using a simple model based on the Kennard-Stepanov theory, Förster's expression for the spectral overlap is shown to be of a thermally activated form, as obtained previously by multiphonon theory. In contrast, the high-frequency internal vibrations contribute a factor which results from tunneling through a potential barrier between potential curves in the configuration coordinate diagram. We thus show that resonance energy transfer is equivalent to phonon-assisted hopping of a trapped excitonic polaron.

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Resonant Energy Transfer between Localized Electronic States in a Crystal

Cited by 185 publications

References 39 publications

Non-radiative transitions in semiconductors

Non-radiative transitions in semiconductors

Luminescence and energy migration in a two-dimensional system: NaEuTiO4

Polaron-exciton model of resonance energy transfer

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