Resonant-cap structures for IMPATT diodes

Groves, I.S.; Lewis, Dave

doi:10.1049/el:19720071

Cited by 41 publications

(4 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…cap height, cap diameter, input impedance of the diode (Z I ) and output impedance (Z L ) of the circuit of the waveguide, etc. [13,14]. However, from the device side, R S is mostly consists of the summation of substrate (n ++ ) resistance, un-depleted epitaxial layer resistance.…”

Section: Small-signal Computation Techniquementioning

confidence: 99%

Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

Mukherjee¹,

Roy²

2010

Current Applied Physics

View full text Add to dashboard Cite

Section: Small-signal Computation Techniquementioning

confidence: 99%

Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

Mukherjee¹,

Roy²

2010

Current Applied Physics

View full text Add to dashboard Cite

“…The theoretical relation 3 shows that the operating wavelength λ and the disc dia D of the resonantcap are directly proportional and the constant of proportionality is 0.58. The empirical relation [Eqn (1) …”

Section: Mechanical Tuningmentioning

confidence: 99%

“…The achievable bandwidth is very crucial, since it dictates the total system design. Many researchers have already investigated the tunable bandwidth of microwave/ millimeter wave IMPATT oscillators [1][2][3][4][5][6][7][8] . Inspite of considerable work reported in the field of resonantcap IMPATT oscillators, there remains a scope for detailed and coherent study of their tuning properties, specially at Ka-band.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Tuning Properties of Waveguide-mounted Resonant-cap IMPATT Oscillator at Ka-band

Pal

2007

DSJ

View full text Add to dashboard Cite

The paper describes the studies of the tuning properties of an indigenously developed resonant-cap continuous wave IMPATT oscillator at Ka-band by changing circuit susceptance through mechanical tuning. It was observed that output power of a resonant-cap IMPATT oscillator passes through a maximum at a particular frequency for a given diode with an optimum combination of cap diameter and cap height. An empirical relation has been found between cap diameter and wavelength of the optimised oscillator, which agrees with the theoretical relation. The effect of sliding short tuner position on the oscillator at optimised condition and the phenomenon of frequency jump in certain positions of sliding short have been studied.

show abstract

“…Fig.1 shows a cross sectional view of the diode mount, supporting post, input port and short circuit which constitute the mixer. The resonant disc-structure [4] above the diode was 1 <>2mm in thickness and 18mm or 12mm in diameter for C and X band mixers respectively. Waveguide 16 was used in the construction of X-band circuits and WG14 in C-band circuits.…”

Section: Introductionmentioning

confidence: 99%

The use of Baritt Diodes in Self-Oscillating Mixers

Kassab

Webb

1980

1980 10th European Microwave Conference

View full text Add to dashboard Cite

Baritt diodes were used to construct single sideband X and Cband waveguide mixers which gave conversion gain up to an IF frequency of 200 MEz. Within this band gain variation of 4 to 6 dB and noise figures of 11 to 14 dB were measured. The microwave circuit could also be used as a reflection amplifier and gave gains of >8 dB over a 300 MHz bandwidth, with noise figures in the range 8>10 dB. It was clear that in the mixer the Baritt diode was functioning as a small signal amplifier, mixer and large signal oscillator.A model for the Baritt diode was developed which considered the effects of space charge, a variable plane for charge injection and velocity modulation in the drift region. In particular the effects of the temperature were studied and a thermovision microscope used to measure the temperature of the diode.

show abstract

Resonant-cap structures for IMPATT diodes

Cited by 41 publications

References 1 publication

Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

Wide-Bandgap III–V nitride based avalanche transit-time diode in Terahertz regime: Studies on the effects of punch through on high frequency characteristics and series resistance of the device

Mechanical Tuning Properties of Waveguide-mounted Resonant-cap IMPATT Oscillator at Ka-band

The use of Baritt Diodes in Self-Oscillating Mixers

Contact Info

Product

Resources

About