Resonant beam pressure sensor fabricated with silicon fusion bonding

Petersen, K.; Pourahmadi, F.; Brown, Joe; Parsons, Philip J.; Skinner, M. E.; Tudor, John

doi:10.1109/sensor.1991.148968

Cited by 65 publications

(33 citation statements)

References 4 publications

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“…In this paper, we present a new SCS capacitive microresonator, which completely relies on the technology and standard layer system as established for MEMS pressure sensors fabrication (Petersen et al 1991). In this method, the normal silicon wafers are used to fabricate microresonators, rather than using SOI wafers, which avoid the necessity of using specific substrates.…”

Section: Introductionmentioning

confidence: 99%

A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

Xiong

et al. 2011

Microsyst Technol

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In this paper, a novel method of fabricating micromachined single crystal silicon bulk mode resonators is demonstrated. The most distinguishing feature of this method is that the resonator structure is fabricated and released simultaneously in the end of the process, as a cavity for structure release is pre-etched in the substrate layer. The advantages of this process include: simplifying the fabrication process by fabricating and releasing the device structure simultaneously; enhancing fabrication yield through eliminating the sacrificial release step needed for existing process. The complete process has been validated and prototypes have been fabricated. The transmission performance of a 4.13 MHz Lamé mode square resonator fabricated using this method is presented, with a quality factor of 8,400 in air and exceeding one million at pressure of 0.11 mbar, respectively.

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Section: Introductionmentioning

confidence: 99%

A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

Xiong

et al. 2011

Microsyst Technol

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“…Resonant sensors also exhibit better long-term stability than piezoresistive and capacitive counterparts [6], both of which involve diaphragms that are susceptible to wear and tear. Moreover, resonant sensors are less prone to hysteresis effects, which can adversely affect other sensor types [5].This paper first discusses the MEMS resonator sensor, then describes the sensing system, and finally presents the simulation results.…”

Section: Introductionmentioning

confidence: 99%

“…A resonant sensor was chosen for its numerous advantages compared to other sensor types such as piezoresistive or capacitive diaphragm-based sensors and Pirani gauges. Since resonant sensors rely on variations in frequency as opposed to amplitude, they are less susceptible to noise and interference [4,5]. This translates into measurements with a high degree of accuracy, as well as increased sensitivity and resolution.…”

mentioning

confidence: 99%

A MEMS-based temperature-compensated vacuum sensor for low-power monolithic integration

Taghvaei

Cicek

Allidina

et al. 2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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This paper presents a MEMS resonator-based vacuum sensor with a low-power transimpedance amplifier and a mixer-based frequency-to-digital converter. The MEMS resonator is fabricated in a CMOS-compatible process, and a 130 nm CMOS technology is used to design the integrated circuitry. The vacuum sensor operates in the pressure range from 10 to 1200 mbar with a resolution of ~2 mbar. The system is temperature-compensated between -10°C and 60°C. The simulated power consumption of the entire system is less than 495 W from a 1 V supply. I. INTRODUCTIONVacuum sensors are essential to monitor pressure levels in a variety of applications, e.g. aerospace, automotive, medical, etc. These sensors must be accurate in the presence of environmental variations, e.g. of temperature, while still providing a low-power, low-cost, and compact solution, especially in mobile applications. A MEMS beam resonator, whose frequency of vibration shifts with ambient pressure variations, was designed to ensure accuracy over a wide range of temperatures. The MEMS process used to fabricate this resonator is fully compatible with standard CMOS technology, allowing for a single-chip solution with features such as temperature compensation and auto-calibration. This work expands on the previously demonstrated concept of mixing resonant frequencies [1, 2] to create a low-power integrated pressure sensor system. The system offers accurate and reliable performance over a wide temperature span, while still exhibiting the sensing range of many commercial sensors, e.g. [3]. A resonant sensor was chosen for its numerous advantages compared to other sensor types such as piezoresistive or capacitive diaphragm-based sensors and Pirani gauges. Since resonant sensors rely on variations in frequency as opposed to amplitude, they are less susceptible to noise and interference [4,5]. This translates into measurements with a high degree of accuracy, as well as increased sensitivity and resolution. Resonant sensors also exhibit better long-term stability than piezoresistive and capacitive counterparts [6], both of which involve diaphragms that are susceptible to wear and tear. Moreover, resonant sensors are less prone to hysteresis effects, which can adversely affect other sensor types [5].This paper first discusses the MEMS resonator sensor, then describes the sensing system, and finally presents the simulation results.

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“…Besides polysilicon [1] and single crystal silicon [2] which are commonly used for making resonant flexure structure, silicon nitride, with its high tensile strength, mechanical hardness and high chemical resistance, has become another excellent fabrication material for micro mechanical component [3]. With optimized LPCVD process, the silicon rich nitride films (SiN) can have a thickness greater than 5 microns with much lower residual stress.…”

Section: Introduction)mentioning

confidence: 99%

Design and modeling of an electromagnetically excited silicon nitride beam resonant pressure sensor

Chen

Shi

et al. 2009

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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An electromagnetically excited silicon nitride beam resonant pressure sensor is described and numerical modeling is carried out on the analysis of the sensitivity of pressure measurement and temperature drift. The proposed approach is based on measurement of resonant frequencies for two resonant beams located on a diaphragm inducing different axial stress under an applied pressure, the differential output of which provides the pressure reading of the sensor. The frequency drift induced on both beams due to ambient temperature influence will be the same, guaranteeing a temperature independent pressure sensing. The device is fabricated in one piece from single crystal silicon by MEMS technology and silicon-rich SiN beams are released by undercutting in KOH etching solution. Both simulation and experimental results show that the proposed method improves the sensitivity, linearity, and temperature stability.

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Resonant beam pressure sensor fabricated with silicon fusion bonding

Cited by 65 publications

References 4 publications

A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

A high Q micromachined single crystal silicon bulk mode resonator with pre-etched cavity

A MEMS-based temperature-compensated vacuum sensor for low-power monolithic integration

Design and modeling of an electromagnetically excited silicon nitride beam resonant pressure sensor

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