Resonance frequency, damping, and differential gain in 1.5 mu m multiple quantum-well lasers

Tatham, M.C.; Lealman, I.F.; Seltzer, C.P.; Westbrook, L.D.; Cooper, D.M.

doi:10.1109/3.123267

Cited by 94 publications

(41 citation statements)

References 40 publications

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“…(6.15). RIN measurement technique was utilized to study the high-speed characteristics of 1.3 µm and 1.55 µm InGaAsP/InGaAs [76,77,78] and 1.55 µm InGaAs/InGaAlAs [79] lasers.…”

Section: Determination Of the Resonant Frequency And Differential Gaimentioning

confidence: 99%

Advances in Measurements of Physical Parameters of Semiconductor Lasers

SHTENGEL¹,

KAZARINOV²,

BELENKY³

et al. 2000

Selected Topics in Electronics and Systems

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We present a summary of advances in characterization techniques allowing for comprehensive study of physical processes in semiconductor lasers. 5. Electrical and optical measurements of RF modulation response below threshold. 5.1. Determination of the differential carrier lifetime from the device impedance. 5.2. Determination of the differential carrier lifetime from the optical response measurements. 6. Optical measurements of RF modulation response and RIN above threshold 6.1. Determination of the resonant frequency and damping factor using carrier subtraction technique. Determination of the differential gain and the gain compression coefficient. 6.2. Determination of the resonant frequency and differential gain from the RIN measurements. 7. Measurements of the linewidth enhancement factor. 7.1. Measurements of linewidth enhancement factorfrom ASE and TSE spectra. 8. Measurements of the carrier temperature and carrier heating in semiconductor lasers. 8.1. Determination of carrier heating from wavelength chirp and TSE measurements. 9. References.

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“…(6.15). RIN measurement technique was utilized to study the high-speed characteristics of 1.3 µm and 1.55 µm InGaAsP/InGaAs [76,77,78] and 1.55 µm InGaAs/InGaAlAs [79] lasers.…”

Section: Determination Of the Resonant Frequency And Differential Gaimentioning

confidence: 99%

Advances in Measurements of Physical Parameters of Semiconductor Lasers

SHTENGEL¹,

KAZARINOV²,

BELENKY³

et al. 2000

Selected Topics in Electronics and Systems

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“…The GaInNAsSb/GaAs value for dg/dn at 1.5µm is comparable to the value of 1.06x10 -15 cm 2 in GaInNAsSb/GaAs lasers at 1.26µm [31] and is significantly higher than the 5-7x10 -16 cm 2 and 2-8x10 -16 cm 2 for multiple quantum well (MQW) InGaAsP/InP lasers at 1.3µm [30] and 1.55µm [29]. At RT, n tr =2.1x10 18 cm -3 was measured and also calculated from the device band structure [22].…”

Section: Relative Intensity Noisementioning

confidence: 57%

“…16 shows a RIN spectrum on a linear scale and its theoretical fit. The fit [29] determines f r and γ at each current. Fig.…”

Section: Relative Intensity Noisementioning

confidence: 99%

High-performance GaInNAsSb/GaAs lasers at 1.5 um

Goddard

Bank

Wistey

et al. 2005

Novel in-Plane Semiconductor Lasers IV

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We achieved 1.5-µm CW SQW GaInNAsSb lasers with GaNAs barriers grown by MBE on GaAs substrates with typical room temperature threshold densities below 600A/cm 2 , external quantum efficiencies above 50%, and output powers exceeding 200mW from both facets for 20x1222µm devices tested epitaxial-side up. In pulsed mode, 450A/cm 2 , 50%, and 1100mW were realized. Longer devices yielded over 425mW of total CW power and thresholds below 450A/cm 2 . These results are comparable to high quality GaInNAs/GaAs lasers at 1.3µm. Z-parameter measurements revealed that these improvements in the performance metrics of approximately 40-60% over previous results are primarily due to reduced monomolecular recombination.The large differential gain of GaInNAsSb/GaNAs/GaAs lasers at 1.5µm of approximately 1.2x10 -15 cm 2 was mostly squandered in previous devices due to large quantities of monomolecular recombination. The characteristic temperatures for threshold current, T 0 , and for efficiency, T 1 , were 66K and 132K, respectively. These reduced values, compared to prior measurements of 106K and 208K, respectively, indicate carrier leakage. Since monomolecular recombination is temperature insensitive, the temperature stability of device operation was adversely affected.

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“…In the case of relative intensity noise (RIN) analysis the situation is similar (Tatham et al, 1992). The similarity of both characterisations becomes obvious if one just notices that the difference is only in the modulation source acting on the same system (LD).…”

Section: Introductionmentioning

confidence: 78%