Resistless high resolution optical lithography on silicon

Abstract

Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process Appl.

Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

“…With a scanning speed of 80 m/s, and assuming an effective illumination area of 1 m in diameter, the maximum illumination dose reaches 40 kJ/cm 2 which is sufficient for hydrogen desorption. 9 Figure 3 shows an AFM image of two slightly displaced scan lines after the KOH etch. Each line scan has a profile consisting of three peaks, a narrow central peak, and two slightly broader side peaks.…”

“…4,8 More recently, optically induced hydrogen desorption was reported. [9][10][11] In this article we discuss results obtained using a scanning near-field optical microscope ͑SNOM͒ 12 to generate an oxide mask on an amorphous silicon ͑a-Si͒ layer. Results for uncoated fiber probes are compared with those for aluminum-coated probes.…”

Combined AFM and laser lithography on hydrogen-passivated amorphous silicon

“…We use a laser direct write system [11] and an AFM to locally oxidize a hydrogen-passivated amorphous silicon surface. Kramer et al [12] have recently achieved linewidths of 200 nm on hydrogen-passivated crystalline silicon by letting two interfering UV-laser beams (λ = 350.7 nm) illuminate the surface for 15 min with a power of 150 mW. By using laser direct writing for local oxidation of a hydrogen-passivated amorphous silicon surface, we have achieved linewidths down to 500 nm with writing speeds up to 100 mm s −1 [13].…”

Optical near-field lithography on hydrogen-passivated silicon surfaces

“…This wavelength matches approximately the Si-H binding energy of ϳ3 eV. 17 Directly written optically induced lines down to 110 nm in width have been measured after exposure and potassium hydroxide ͑KOH͒ etch. Further, linewidths of 50 nm have been observed without light exposure, probably produced by an electrostatic potential between the fiber probe and the amorphous silicon layer.…”

“…This technique has been introduced using STM, 9-13 AFM, 14,15 and electron beam lithography. 12,16 Kramer et al 17 have recently reported on a purely optically induced oxidation. An optical interference pattern ͑ϭ350.7 nm͒ has been projected onto a hydrogen-passivated silicon surface, which produces submicrometer lines after etching.…”