2006
DOI: 10.1063/1.2339029
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Resistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions

Abstract: The authors describe efficient patterning of transparent, conductive single-walled carbon nanotube thin films by photolithography and e-beam lithography followed by reactive ion etching, and study the transport characteristics of the films patterned down to 200nm lateral dimensions. The resistivity of the films is independent of device length, while increasing over three orders of magnitude compared to the bulk films, as their width and thickness shrink. This behavior is explained by a geometrical argument. Su… Show more

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Cited by 59 publications
(83 citation statements)
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References 15 publications
(20 reference statements)
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“…1,22,23 Film thicknesses of ϳ75 nm that are far above the percolation threshold ͑which is a few nanometers͒ were used for this study. Following the deposition, the CNT film was patterned into four-point-probe structures by photolithography or e-beam lithography ͑de-pending on the device width͒ and subsequently etched using an O 2 chemistry in an inductively coupled plasma reactive ion etcher, as described in detail previously.…”
Section: Methodsmentioning
confidence: 99%
“…1,22,23 Film thicknesses of ϳ75 nm that are far above the percolation threshold ͑which is a few nanometers͒ were used for this study. Following the deposition, the CNT film was patterned into four-point-probe structures by photolithography or e-beam lithography ͑de-pending on the device width͒ and subsequently etched using an O 2 chemistry in an inductively coupled plasma reactive ion etcher, as described in detail previously.…”
Section: Methodsmentioning
confidence: 99%
“…167,168 Percolation effects show a power law behavior of channel resistance with channel length (Fig. 2b), 164,167,169 channel width, CNT network density, and CNT alignment. 166 The field-effect mobility of CNT TFTs (< 100 cm 2 /Vs) is significantly less than that for a single CNT (> 10,000 cm 2 /Vs) mainly for the following two reasons.…”
Section: Carbon Nanotube Thin-film Transistors For Digital Electronicsmentioning
confidence: 99%
“…The experimental relationship between the transmittance and the sheet resistance of the film is plotted in Figure 3, along with the relationship between the steady-state temperatures for an applied voltage of 60 V for eight different SWCNT films on glass substrates measuring 2.5 × 2.5 × 0.3 cm SWCNTs should be established based on long length, low density SWCNTs, as reported in a previous study. [17,18] The length of the SWCNTs affects the sheet resistance and transmittance of the film. When the length of the SWCNTs is short, contacts between networked SWCNTs increase, and this leads to an increase of the overall film resistance.…”
mentioning
confidence: 99%