Resistivity of epitaxial copper nanolines with trapezoidal cross-section

Lu, Zonghuan; Frey, David; Merkh, Thomas; Lord, R. J.; Washington, Morris; Lu, Toh‐Ming

doi:10.1016/j.tsf.2015.12.063

Cited by 4 publications

(2 citation statements)

References 28 publications

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“…It demonstrates outstanding thermal and electrical conductivities and reliabilities in the electronic applications [16,[40][41][42]. The crystalline and interface properties of Cu nanostructure plays an essential role affecting its electrical conductivity in devices with dimensions down to nanometer range [40,43]. Therefore, it is very important to understand the interfacial interactions among Cu, graphene and substrate, and to improve the crystalline properties of Cu/graphene heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Remote epitaxy of copper on sapphire through monolayer graphene buffer

Sun

Xie

et al. 2018

Nanotechnology

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In this work, we show that remote heteroepitaxy can be achieved when Cu thin film is grown on single crystal, monolayer graphene buffered sapphire(0001) substrate via a thermal evaporation process. X-ray diffraction and electron backscatter diffraction data show that the epitaxy process forms a prevailing Cu crystal domain, which is remotely registered in-plane to the sapphire crystal lattice below the monolayer graphene, with the (111) out-of-plane orientation. As a poor metal with zero density of states at its Fermi level, monolayer graphene cannot totally screen out the stronger charge transfer/metallic interactions between Cu and substrate atoms. The primary Cu domain thus has good crystal quality as manifested by a narrow crystal misorientation distribution. On the other hand, we show that graphene interface imperfections, such as bilayers/multilayers, wrinkles and interface contaminations, can effectively weaken the atomic interactions between Cu and sapphire. This results in a second Cu domain, which directly grows on and follows the graphene hexagonal lattice symmetry and orientation. Because of the weak van der Waals interaction between Cu and graphene, this domain has inferior crystal quality. The results are further confirmed using graphene buffered spinel(111) substrate, which indicates that this remote epitaxial behavior is not unique to the Cu/sapphire system.

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Section: Introductionmentioning

confidence: 99%

Remote epitaxy of copper on sapphire through monolayer graphene buffer

Sun

Xie

et al. 2018

Nanotechnology

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“…The challenging issue is the requirement of miniaturization with the decreasing size of observed features. 1 According to International Technology Roadmap for Semiconductors, the uncertainty of reference materials should under a quarter of the accuracy of the semiconductor features. For example, the accuracy should be under 12% of the critical dimension (CD).…”

Section: Introductionmentioning

confidence: 99%

Asymmetric line edge roughness of multilayer grating reference materials

et al. 2018

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Prediction of the filtrate particle size distribution from the pore size distribution in membrane filtration: Numerical correlations from computer simulations AIP Advances 8, 035308 (2018) Line edge roughness (LER) in a one dimensional Si/SiO 2 multilayer grating reference material with 20 nm nominal pitch size was investigated. It was shown for the first time that the LER of Si on SiO 2 edges was about three times larger than that of SiO 2 on Si edges. The asymmetric LERs led to asymmetric uncertainties and it must be considered when using the multilayer grating reference material. Moreover, the origin of asymmetric LER was investigated based on distinguishing contributions of interfacial roughness and interfacial diffusion. The interfacial roughness was determined to be symmetric because the surface roughness of the substrate, the Si single layer, the Si/SiO 2 bilayer and the Si/SiO 2 multilayer were almost the same with the value about 0.1 nm. Whereas, the interfacial diffusion layer of Si on SiO 2 interface was about two times larger than that of SiO 2 on Si interface through X-ray reflectivity (XRR) reverse fitting and transmission electron microscopy (TEM) image analysis. The asymmetric interfacial diffusion layer was proposed to be the main reason of the observed asymmetric LERs of the Si/SiO 2 multilayer grating reference material. © 2018 Author (s)

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Epitaxial Ru Nanowire on Single-Crystalline Graphene for Advanced Interconnect Application

Lu,

Frey,

Dhull

et al. 2024

ACS Appl. Electron. Mater.

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In this work, we study epitaxial Ru metallic nanowire on graphene as a model material for future interconnect applications. We first grew epitaxial Ru ultrathin film on single-crystalline, monolayer graphene on SiO2 substrate. We demonstrated fabrication of epitaxial Ru nanowires on graphene using high-resolution H-SiQ ebeam lithography and reaction ion etching techniques. The epitaxial Ru nanowires were prepared using O2/Cl2 dry etching chemistry with ebeam patterned H-SiQ as the etching mask on pregrown Ru thin film. We created epitaxial Ru nanowires with a line height down to 7 nm and a line width down to 26 nm. Electron backscatter diffraction characterization confirms that the epitaxial Ru nanowires maintain a single-crystalline structure. Focused ion beam milling reveals the rectangular shape of the nanowire cross sections. We measured the electrical resistivity of Ru nanowires fabricated on both graphene and bare SiO2 substrates with line widths ranging from ∼26 nm to ∼200 nm and line height ranging from ∼7 nm to ∼19 nm. We confirmed that epitaxial Ru nanowires grown on graphene have significantly lower resistivity (∼13% to ∼38% reductions) than polycrystalline Ru nanowires grown on bare SiO2 substrate with similar cross-section areas which is due to better crystalline quality and reduced electron grain boundary scattering.

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Resistivity of epitaxial copper nanolines with trapezoidal cross-section

Cited by 4 publications

References 28 publications

Remote epitaxy of copper on sapphire through monolayer graphene buffer

Remote epitaxy of copper on sapphire through monolayer graphene buffer

Asymmetric line edge roughness of multilayer grating reference materials

Epitaxial Ru Nanowire on Single-Crystalline Graphene for Advanced Interconnect Application

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