Resistivity changes and defect mobility in ion-irradiated<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">YBa</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cu</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math

Marwick, A. D.; Clark, Gregory; Yee, D. S.; Laibowitz, R. B.; Coleman, G.; Cuomo, J. J.

doi:10.1103/physrevb.39.9061

Cited by 40 publications

(10 citation statements)

References 19 publications

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“…At lower fluences and involving lighter ions, the T c variation has been shown to be crucially dependent on sample quality. 3 In the later kind of experiments point defects play a crucial role in deciding the changes caused by irradiation. However, a correlation between T c and resistance variation is still to be expected as observed by Albenque et al 10 Thus, the T c decrease at higher fluence (Fig.…”

Section: Resultsmentioning

confidence: 99%

140 MeV Si-ION IRRADIATION INDUCED T_c ENHANCEMENT IN YBCO THIN FILMS

et al. 1999

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On-line resistance measurement in a temperature range of 78 K to 124 K was performed on epitaxial thin films of YBCO irradiated with 140 MeV Si ions. The superconducting transition temperature (Tc), resistivity at 100 K (ρ 100 k ) and transition width (∆Tc) all show peak at a fluence of 1.5 × 10 13 ions/cm 2 . A crystallochemical analysis based on metastability induced charge and spin fluctuation due to irradiation induced oxygen disorder in the CuO chains explains the Tc enhancement in the low fluence regime. 79 Mod. Phys. Lett. B 1999.13:79-87. Downloaded from www.worldscientific.com by MONASH UNIVERSITY on 02/05/15. For personal use only.

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Section: Resultsmentioning

confidence: 99%

140 MeV Si-ION IRRADIATION INDUCED T_c ENHANCEMENT IN YBCO THIN FILMS

et al. 1999

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“…електронами, що виникають при опроміненні кристалів γ квантами. До теперішнього часу накопичено багато експериментальних даних з впливу жорстких випромінювань на ВТНП -матеріали [72][73][74][75][76][77][78][79][80][81][82][83][84][85][86][87][88][89][90].…”

Section: дефекти кристалічної структури і їх вплив на електротранспорunclassified

Crystal-chemical structure and electrical conductivity of HTSC – cuprates under conditions of variation of defective composition and exposure to high-energy irradiation (literature review)

Khadzhai¹,

Литвинов²,

Вовк³

et al. 2019

The Journal of v. N. Karazin Kharkiv National University, Series "Physics"

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The review considers the features of the crystal chemical structure of HTSC cuprates and modern ideas about the nature of their electrical conductivity. The analysis of factors affecting the electrical properties of HTSC cuprates is carried out. The reasons for the formation of specific chemical bonds between various ions, leading to the formation of clusters of negative U centers in this compound, as well as experimental facts indicating a close relationship between the crystal chemical structure of metal oxide compounds and their anomalous electrical conductivity are discussed. The anisotropy of their physical properties, in particular, the anisotropy of their electrical conductivity, is associated with the peculiarities of the crystallochemical structure of single-crystal HTSC cuprates. The study of the influence of defects of various nature on the electrical conductivity in various crystallographic directions, under conditions of temperature variation is an important source of experimental data for constructing theoretical models of layered HTSCs. It is shown that, along with the degree of deviation from oxygen stoichiometry, isovalent and non-isovalent substitution, an important method for modifying the electrical properties of cuprates is their irradiation with high-energy electrons. Taking into account modern ideas about the interaction of high-energy radiation with solids, the possible mechanisms of the influence of high-energy radiation on their electrical characteristics are considered. Based on the experimental data presented in the literature, the degree of influence of various processing methods of HTSC cuprates on their electrical conductivity is estimated. Based on the analysis, the conditions for the selection of elements for the synthesis of compounds characterized by a higher temperature of transition to the superconducting state are formulated and issues that have not received their experimental and theoretical solutions are highlighted.

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“…Room temperature resistivity (ρ 300 ) of the polycrystalline samples increased with dose except for the lowest dose. Decrease in resistivity for the sample irradiated with the dose of 1x10 13 Neon/cm 2 may be due to thermal annealing of the defects, which were initially present in the sintered sample. Similar phenomenon was observed in case of YBa 2 Cu 3 O 7 irradiated at low dose of heavy ions like B [13].…”

Section: Methodsmentioning

confidence: 99%

“…Decrease in resistivity for the sample irradiated with the dose of 1x10 13 Neon/cm 2 may be due to thermal annealing of the defects, which were initially present in the sintered sample. Similar phenomenon was observed in case of YBa 2 Cu 3 O 7 irradiated at low dose of heavy ions like B [13]. At low dose of irradiation, mobile defects are also seen to increase the long-range ordering in partly ordered metallic alloys [14].…”

Section: Methodsmentioning

confidence: 99%

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Neon ion irradiation studies on MgB2 superconductor

Talapatra

Bandyopadhyay

Sen

et al. 2005

Solid State Communications

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Abstract:160 MeV Neon ion irradiation has been carried out on MgB 2 polycrystalline pellets at various doses. There has not been any significant change in Tc except at the highest dose of 1x10 15 ions/cm 2 . Increase in resistivity has been noticed. Resistivity data have been fitted with BlochGrüneisen function and the values of Debye temperature, residual resistivity and temperature coefficient of resistivity have been extracted for irradiated as well as unirradiated samples. The increase in the resistivity of irradiated samples has been explained in the light of damage in the 3D π bonding network of Boron.

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Resistivity changes and defect mobility in ion-irradiatedYBa2Cu3

Cited by 40 publications

References 19 publications

140 MeV Si-ION IRRADIATION INDUCED T_c ENHANCEMENT IN YBCO THIN FILMS

140 MeV Si-ION IRRADIATION INDUCED T_c ENHANCEMENT IN YBCO THIN FILMS

Crystal-chemical structure and electrical conductivity of HTSC – cuprates under conditions of variation of defective composition and exposure to high-energy irradiation (literature review)

Neon ion irradiation studies on MgB2 superconductor

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Resistivity changes and defect mobility in ion-irradiatedYBa2Cu3

Cited by 40 publications

References 19 publications

140 MeV Si-ION IRRADIATION INDUCED Tc ENHANCEMENT IN YBCO THIN FILMS

140 MeV Si-ION IRRADIATION INDUCED Tc ENHANCEMENT IN YBCO THIN FILMS

Crystal-chemical structure and electrical conductivity of HTSC – cuprates under conditions of variation of defective composition and exposure to high-energy irradiation (literature review)

Neon ion irradiation studies on MgB2 superconductor

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140 MeV Si-ION IRRADIATION INDUCED T_c ENHANCEMENT IN YBCO THIN FILMS

140 MeV Si-ION IRRADIATION INDUCED T_c ENHANCEMENT IN YBCO THIN FILMS