1987
DOI: 10.1016/0304-8853(87)90681-0
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Resistivity and thermoelectric power of single crystals of semiconducting SmS between 1.5 and 350 K

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Cited by 7 publications
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“…Note that there is no indication of peak structure as reported previously. 12) We estimate the gap energy E RES g from the Arrhenius plot of the electrical resistivity, lnρ vs. E RES g /2k B T ; see upper panel of Fig. 3.…”
Section: Resultsmentioning
confidence: 99%
“…Note that there is no indication of peak structure as reported previously. 12) We estimate the gap energy E RES g from the Arrhenius plot of the electrical resistivity, lnρ vs. E RES g /2k B T ; see upper panel of Fig. 3.…”
Section: Resultsmentioning
confidence: 99%
“…In lanthanide based strongly correlated electron systems, the valence of lanthanide ion is known as one of the key parameters controlling physical properties, including transport and magnetism. SmS is a nonmagnetic semiconductor with an energy gap of ∼ 1000 K at ambient pressure [1,2]. SmS, which crystalizes in the NaCl structure with almost divalent Sm ions, undergoes an isostructural valence transition with first-order nature at a pressure of 0.65 GPa [3].…”
Section: Introductionmentioning
confidence: 99%