The magnetic anisotropy of (001) oriented La0.7Sr0.3MnO3 films of thickness t=7–156 nm, deposited on LaAlO3 substrates, was measured by torque magnetometry in the temperature range T=10–300 K. For t⩾50 nm and H rotating out of plane the anisotropy Ku agrees well with shape anisotropy. For thinner films, Ku is reduced and its sign is reversed for t=7 nm and T<70 K; this can be explained by a perpendicular anisotropy Kuε due to lattice strain. The crystal anisotropy constant K1 was determined from the biaxial in-plane anisotropy. At T=100 K K1 differed by no more than 50% from the mean value −8 kJ/m3 in the thickness region investigated. K1 was much less dependent on the thickness t and strain relaxation in the films than Kuε.
This work examines the electrical activity of defects at the interface with Si͑100͒ for HfO 2 thin films ͑10-20 nm͒ deposited by injection metal oxide chemical vapor deposition. Based on an analysis of the capacitance-voltage response of gold/HfO 2 /Si(100) structures, two clear peaks are detected in the interface state density profiles, at specific energies in the lower (E v ϩ 0.22-0.28 eV͒ and upper (E v ϩ 0.93-0.97 eV͒ bandgap. The densities of defects responsible for these peaks have been calculated as 1.8-2.4 ϫ 10 12 and 7.3-9.1 ϫ 10 12 cm Ϫ2 , respectively. These defects are present when the HfO 2 films were deposited at sufficiently low temperatures (T р 350°C) to prevent hydrogen passivation. The density of interface defects was not significantly different for HfO 2 films deposited on native oxide or hydrogen-terminated silicon surfaces. The position of these defects in the silicon bandgap corresponds to the location of P b0 (/P b1 ) dangling bond defects in the thermally oxidized Si(100)/SiO 2 system. HfO 2 films deposited at 450°C did not exhibit the prominent interface defects observed on films deposited at T р 350°C, indicating hydrogen passivation during deposition.
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