Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Abstract

We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2−) is responsible for the switching transition in Pt/NiO/Pt structures.

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

“…The dielectric constants ( ε i ) extracted from our fitting are 10.9 and 11.9 for the pristine state and the threshold OFF state, respectively. As a higher ε implies a higher oxygen concentration303940, our data confirm that the threshold OFF state has more oxygen than the pristine state. We also directly prepared NiO samples under different oxygen pressures, and indeed the high pressure grown sample shows the threshold switching while the lower pressure grown sample shows the memory switching (see Supplementary Fig.…”

“…The I-V curves of both states follow the Poole-Frenkel (PF) mechanism30. The PF effect describes the high-electric-field-assisted conduction in insulators, which can be quantitatively expressed as follows:…”

Magnetron Sputtered Ni‐rich Nickel Oxide Nano‐Films for Resistive Switching Memory Applications

“…The formation of elemental Ni phase results from the reduction and decomposition of the NiO during the ion sputtering process with negligible residual oxygen in the sputtering chamber . Although NiO is well known as a p ‐type semiconductor due to Ni deficiency/vacancy, the presence of high‐concentration metallic Ni phase which introduces electronic defects in the NiO matrix results in the n ‐type nature in the as‐prepared Ni‐rich NiO nano‐films of this work . It is expected that the excess metallic Ni component which is dispersed in the NiO matrix as Ni nanoclusters or nanoparticles plays an important role in the reversible resistance switching of the Ni‐rich nickel oxide nano‐films described below.…”

“…Initially, the Ni‐rich NiO nano‐film exhibits an insulator property with a very small current conduction following the trap‐controlled SCLC process. During the forming process with a high voltage applied, soft breakdown takes place in the NiO nano‐film, in which the metallic nickel phase is driven along the NiO grain boundaries under high electric field to form some conductive electron tunneling paths (i.e., the CFs) . As shown in Fig.…”

Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

“…Among these, ReRAMs have been regarded as promising candidates for the next generation nonvolatile memories due to their simple structure and compatibility with metal oxide semiconductor technologies [4]. The current candidate materials for ReRAM devices include binary transition metal oxides such as ZrO 2 [5], NiO [6], and TiO 2 [7]; perovskite SrZrO 3 (SZO) [8][9][10][11][12][13][14][15][16], ferroelectric YMn 1−x O 3 [17], Cu doped Ge 0.3 Se 0.7 [18].…”