Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Abstract

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

“…The migration of charged oxygen vacancies is the mostly cited mechanism responsible for the RS behavior observed in a wide range of sandwich-type oxide-based devices [34,[74][75][76][77][78]. However, as proposed by Liu and co-workers, the trapping or detrapping of electrons in the defect-derived quasiconduction band in 150-nm-thick LAO films can lead to the overlap of wave functions and the reversible insulator-metal transitions [68].…”

Evolution of the SrTiO3–MoO3 Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study

“…8 Furthermore, such interface-modulated resistive switching has been extensively reported for other transition-metal oxides. [15][16][17][18][19][20][21][22] In these breakthroughs, electronic structures and physical properties of STO-based interfaces are important in the functionalization of oxide electronics. Hence, a deep understanding of charge transfer and interfacial band alignment is the key to further improve the performance of functional devices based on STO and other oxides.…”

Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

“…[1][2][3][4][5] Among the functional oxides, tin dioxide (SnO 2 ), is extensively applied in the fields of gas sensors, transparent conducting thin films, catalysis, solar cells and so on due to its excellent optical and electrical properties. [6][7][8][9][10][11][12][13] Although SnO 2 has a wide direct bandgap of B3.6 eV (ref.…”