Resistive switching mechanism in printed non‐volatile Ag/ZrO ₂ /ITO sandwiched structure

Abstract

The resistive switching mechanism in the printed sandwiched structures of Ag/zirconium oxide/indium tin oxide (ITO) is analytically demonstrated. The switching from the ON to OFF state of the fabricated device is attributed to the modulation of ohmic contact into opposite Schottky barriers following on from the electrochemical dissolution of the Ag filament from the weakest point near the ITO electrode and alteration of the Schottky barriers into an ohmic contact consequential to the reformation of the Ag filament during the transition of OFF into ON state. Physical current conduction governing laws verify the concluded transitions between ohmic contact and Schottky barriers.

Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

“…Thus, the formation of CFs in the oxide layer shunts the Schottky barrier at the Au/ZrO2 interface [25,35] and eliminates the unidirectional conductivity effect in the as-grown Zr/ZrO2nt/Au structure [42].…”

“…It is known that the resistive switching in the oxide layer of MDM structures underlying the memory device operation is usually provided by the mobility of anionic (VO) vacancies [20,25,27,28,29,31,32,33], ions of impurity metals [18,19,20,24,26,33,34,35] or Zr + [16,28,36] in the active layer under an external electric field. The electrical resistance of the memristor in lowresistance (LRS), high-resistance (HRS) and intermediate states are governed by the thickness and imperfection of the dioxide layer [23,24,28,31,32,37].…”

Memristive devices based on mass printed organic resistive switching layers

“…The development of fully printed memristive devices has been mainly focused on electrohydrodynamic (EHD) jet printing techniques for all three layers [14][15][16][17]. Partially printed memristive systems were fabricated on ITO coated polymer foil or glass which served as substrate and bottom electrode and memristive layers were deposited by EHD printing [18][19][20][21][22]. A combination of EHD printing for the memristive layer and EHD or screen printing for the top electrode and reverse offset printing for the bottom electrode was used by the Choi group [23][24][25].…”

Resistive‐switching and current‐conduction mechanisms in F8BT polymer resistive switch

“…Resistive switching is a resistance-based switching in contrast to a charge-based switching. Resistive-switching devices have emerged as potential candidates for memory and electrical switching elements due to their small size, high speed, and simple device structure [1][2][3]. They are capacitor-type metal-insulatormetal (MIM) structures that possess at least two different resistance states when are being forced by a voltage source at its electrodes [4,5].…”

“…These materials are quite significant in optical readout applications [15]. Poly [(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo [2,1,3]thiadiazol-4,8-diyl)] (F8BT) is one of the frequently used polymers to fabricate the emissive layer of light emitting devices [16][17][18][19]. F8BT has been utilised as an emissive layer for light emitting diodes in a recent research work [20].…”