Resistive switching in transition metal oxides

Sawa, Akihito

doi:10.1016/s1369-7021(08)70119-6

Cited by 2,742 publications

(2,259 citation statements)

References 45 publications

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“…Expected advantages of ReRAM compared with flash memory include higher-density integration, higher speed, and lower energy consumption 21,22 . The MIT actually taking place in such memory devices may be different from what is observed for bulk materials.…”

Section: Mottronicsmentioning

confidence: 99%

Emergent functions of quantum materials

2017

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Materials can harbour quantum many-body systems, most typically in the form of strongly correlated electrons in solids, that lead to novel and remarkable functions thanks to emergence-collective behaviours that arise from strong interactions among the elements. These include the Mott transition, high-temperature superconductivity, topological superconductivity, colossal magnetoresistance, giant magnetoelectric e ect, and topological insulators. These phenomena will probably be crucial for developing the next-generation quantum technologies that will meet the urgent technological demands for achieving a sustainable and safe society. Dissipationless electronics using topological currents and quantum spins, energy harvesting such as photovoltaics and thermoelectrics, and secure quantum computing and communication are the three major fields of applications working towards this goal. Here, we review the basic principles and the current status of the emergent phenomena and functions in materials from the viewpoint of strong correlation and topology.E mergence is a concept developed for many-body systems, indicating the properties, phenomena, and functions that never appear in the individual elements but are realized only when a huge number of elements get together 1 . Inside materials, emergent phenomena are often seen due to the interaction of electronic states; with recent developments on electronic states in solids schematically summarized in Fig. 1a. Electrons in solids have several degrees of freedom: charge, spin and orbital, and are characterized by the topological nature determined by the atomic potential on the crystal lattice structure, as schematically shown in Fig. 1b. These five attributes are coupled together and determine the overall responses to stimuli, which appear as materials' electrical, magnetic, optical, thermal, and mechanical properties.These collective electrons demonstrate various macroscopic quantum phenomena, the representative example of which is superconductivity. One of the big challenges in condensed matter physics is to increase the temperature (T c ) at which superconductivity can be observed to above room temperature. However, there are many other macroscopic quantum phenomena that are already observable above room temperature. One is magnetism (by the Bohr-van Leeuwen theorem), and the other is ferroelectricity 2,3 . Remarkably, there are common features of these three macroscopic quantum phenomena: the order parameter, which is of quantum origin, behaves as a classical quantity, and the quantum topology plays a crucial role.The topological nature of the electronic states is the key concept in the most recent developments in understanding quantum materials. The quantum Hall effect, topological insulators, and topological superconductors are all characterized by nontrivial topologies in Hilbert space. The Berry phase, which describes the connection and curvature of the subspace of Hilbert space, plays the central role in the unified principle to describe this topological nature 4 . ...

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Section: Mottronicsmentioning

confidence: 99%

Emergent functions of quantum materials

2017

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“…[1][2][3] Accordingly, the International Technology Roadmap for Semiconductors (ITRS) has recently completed an assessment of eight memory technologies among the emerging research devices (ERDs) and recommended that Redox RAM [4][5][6][7] and STT-MRAM [ 8 , 9 ] (spin-transfer torque magnetic RAM) receive additional focus in research and development. [ 1 ] Redox RAM is one type of memristor [10][11][12][13][14][15] that has shown more than adequate scalability, non-volatility, multiplestate operation, 3D stackability, and complementary metaloxide semiconductor (CMOS) compatibility.…”

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Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

et al. 2011

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“…To effectively control the switching characteristics with excellent memory performance, a thorough understanding of the switching behaviour is essential [5][6][7][8] . There have been numerous attempts to identify the origin of resistance changes in various transition metal oxides, thereby understanding the switching mechanism associated with the behaviour of oxygen vacancies [9][10][11] and with the composition modulation 12,13 .…”

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In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

et al. 2013

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Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO 2 /a-Ta 2 O 5 À x /a-TaO 2 À x /Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The currentvoltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO 2 À x base layer, which consist of nanoscale TaO 1 À x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

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Resistive switching in transition metal oxides

Cited by 2,742 publications

References 45 publications

Emergent functions of quantum materials

Emergent functions of quantum materials

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

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