Resistive Switching in Nonperovskite-Phase CsPbI₃ Film-Based Memory Devices

Abstract

Because of their attractive photoelectrical properties, perovskite-phase, CsPbX3 (X = I, Br, or Cl) materials have recently gained attention for their applications in resistive switching (RS) memories. However, phase transition of the CsPbI3 from perovskite (cubic phase) to nonperovskite (orthorhombic phase) at room temperature is problematic; it remains a challenge to apply nonperovskite CsPbI3 in RS memories. In the present work, a polymethylmethacrylate (PMMA)-assisted deposition method for nonperovskite CsPbI3 is introduced to fabricate a composite film of CsPbI3 with PMMA (PMMA@CsPbI3) with a smooth surface morphology on fluorine-doped tin oxide (FTO) substrates. Devices with a Ag/PMMA@CsPbI3/FTO architecture show nonvolatile RS characteristics with an ON/OFF ratio around 102, endurance over 500 cycles, and a retention time of 103 s. Analyses suggested that a Schottky barrier at the Ag/PMMA@CsPbI3 interface and a bias-induced migration of Ag ions within the composite films are responsible for the RS operation. This is the first record for RS devices based on nonperovskite CsPbI3, and it may bring the future research on nonperovskite CsPbI3 applied in RS memory devices some new inspiration..

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

“…To meet the growing appetite for next-generation smart storage systems and to handle the large amounts of data derived from information and communication technologies worldwide, memory, which is an integral component of electronic devices, is expected to undergo several modifications. 1 These modifications will mainly be aimed at achieving easy fabrication processes, device miniaturization, flexibility, high cycling and retention stability, low programming energy and fast switching speed. Furthermore, systems with the added advantage of flexibility provide the opportunity to be integrated in next-generation devices, such as wireless sensors, roll-up displays and wearable devices.…”

Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite

“…High‐resolution scans of Pb 4f (as‐fabricated perovskite and SPTP) are shown in Figure 1e with the binding energies of Pb 4f located at 139.2 and 144.1 eV, indicating that Pb element in as‐fabricated perovskite and SPTP layer are 2+ oxidation state. [ 21,22 ] To further inspect the structure of the SPTP layer, X‐ray diffraction (XRD) patterns of the as‐fabricated perovskite (blue) and SPTP (red) films were obtained, as shown in Figure 1f, where the peaks indicated by green and yellow diamonds show the crystallization of CsPb 2 Br 5 and CsPbBr 3 , respectively. The XRD patterns showed that the as‐fabricated perovskite matched the crystal orientation of the typical CsPbBr 3 structure, whereas the SPTP film showed a crystal orientation corresponding to CsPbBr 3 and CsPb 2 Br 5 .…”

Halide Perovskites for Resistive Switching Memory

“…Actually, the growth and annihilation modes of conductive filament depend on the mobility of electrochemically active metal cations, the redox reaction, and the nucleation of nanoscale metal filament. The migration of Ag + cations and the formation of dendrite-like Ag filament were experimentally demonstrated in the lateral Ag/PMMA@CsPbI 3 /Ag structure by SEM (Figure e–h) …”

“…The migration of Ag + cations and the formation of dendrite-like Ag filament were experimentally demonstrated in the lateral Ag/PMMA@CsPbI 3 /Ag structure by SEM (Figure 3e−h). 42 In particular, Sun et al proposed the competitive mechanism between anion migration and cation migration and demonstrated that the resistive switching behaviors were highly dependent upon the film thickness in the Ag/MAPbI 3 /FTO structure. 45 In addition, the Ag electrode could react with halide ions to form AgX compounds, thus inducing more halogen vacancies in halide perovskite films and leading to the degradation of Ag electrode.…”

“…Panels c and d are reproduced from ref , copyright 2017 American Chemical Society. Panels e–h are reproduced from ref , copyright 2020 American Chemical Society. , …”