Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

Yalon, Eilam; Gavrilov, A.; Cohen, Shimon; Mistele, D.; Meyler, B.; Salzman, J.; Ritter, D.

doi:10.1109/led.2011.2171317

Cited by 38 publications

(29 citation statements)

References 15 publications

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“…An asymmetric nonlinear I -V curve at low applied power indicates that an asymmetric energy barrier dominates transport [4], [21], [23], [30]. In many cases, most of the applied voltage drops across this barrier, and most of the energy is dissipated at the interfaces.…”

Section: Heat Dissipation Mechanismsmentioning

confidence: 99%

“…2(b)] and contributes to cooling, not only heating. The tunneling gap in resistive switching devices is in the order of ∼1-2 nm [13], [23], [30], [35], [36]. We therefore expect that the energy distribution of electrons is centered between the Fermi levels of both electrodes, and that energy dissipation takes place at both the interfaces.…”

Section: Heat Dissipation Mechanismsmentioning

confidence: 99%

“…The experimental data in this paper was obtained by the method described in [20] using a MIS bipolar transistor (MIS-BT) structure [23]. The use of a semiconductor electrode allows determining the local temperature by measuring the minority carrier current in the semiconductor.…”

Section: Experimental Evaluation Of the Local Temperature Using mentioning

confidence: 99%

“…The top electrode metal stack is Ti(15 nm)/Au(100 nm) and the bottom electrode is InGaAs(200 nm). As the applied bias drops across the tunneling gap [23] Joule heating of the filament was neglected, so that only heating by electron relaxation at interfaces was considered in the simulations.…”

Section: A Goals and Thermal Parametersmentioning

confidence: 99%

“…Devices with a tunneling gap at the LRS exhibit nonlinear I -V characteristics, which is advantageous for a memory element in a crossbar array [21], [22]. We have previously shown that a tunneling gap exists in the device studied in [20] and [23] at the LRS. Preliminary simulation results for the device under consideration were reported in [24].…”

Section: Introductionmentioning

confidence: 99%

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Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

Yalon

Riess

Ritter

2014

IEEE Trans. Electron Devices

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The local temperature plays a key role in resistive switching devices. We have previously presented a method to experimentally evaluate the filament temperature using metal-insulator-semiconductor bipolar transistor structure. In light of the experimental results, we discuss here the various possible heat dissipation mechanisms, and compare thermal simulations with the measured temperatures. Since the applied bias dropped across a tunneling gap, heat dissipation occurs at the interfaces. The simulations are consistent with our experimental data for a filament tip diameter of ∼1 nm. A temperaturedependent thermal resistance of the interfaces and/or bulk was introduced to obtain a fit between the simulations and measured data. Thermal resistances imposed by interfaces dominated bulk material heat transport in the simulations.

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Section: Heat Dissipation Mechanismsmentioning

confidence: 99%

Section: Heat Dissipation Mechanismsmentioning

confidence: 99%

Section: Experimental Evaluation Of the Local Temperature Using mentioning

confidence: 99%

Section: A Goals and Thermal Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

Yalon

Riess

Ritter

2014

IEEE Trans. Electron Devices

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Nanosession: Valence Change Memories ‐ A Look Inside

Muenstermann

Krug

Park

et al. 2012

Frontiers in Electronic Materials

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Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox‐Based Resistive Switching Cells using a High‐Speed Nanoheater

Witzleben

Fleck

Funck

et al. 2017

Adv Elect Materials

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Ionic transport greatly influences the switching kinetics of filamentary resistive switching memories and depends strongly on temperature and electric fields. To separate the impact of both parameters on the switching kinetics and to further deepen the understanding of the influence of local Joule heating, a nanometer‐sized heating structure is employed. It consists of a 100 nm wide Pt electrode which, due to Joule heating, serves as heating source upon an electrical stimulus. These self‐heating properties are underlined by a 3D finite elements simulation model, which confirms a temperature increase of almost 500 K. Experimental electrical pulse measurements indicate that for this temperature a steady state is achieved in less than 100 ns. By employing this heating structure, kinetic measurements of a Pt/Ta2O5/Ta cell are performed at different temperatures and reveal that significantly decreased SET times are obtained with increasing temperature. This effect is accompanied by an increasing slope of the current prior to the SET event. The experimental results are further confirmed by predictions of an analytical model based on ionic conduction.

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Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

Cited by 38 publications

References 15 publications

Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results

Nanosession: Valence Change Memories ‐ A Look Inside

Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox‐Based Resistive Switching Cells using a High‐Speed Nanoheater

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