Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Kim, So Won; Choi, Kyung Hyun

doi:10.1088/1361-6463/aa798a

Cited by 37 publications

(26 citation statements)

References 40 publications

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“…The surface morphology of boron nitride coatings was evaluated using scanning electron microscopy, as shown in Figure 5. As reported in our previous study [28], the morphology of hexagonal boron nitride grown without applied bias shows plate-like structures which have been reported for nanocrystalline h-BN [52,53]. In contrast, the bias-enhanced BN surface shows rounded nodules ~5µm diameter protruding from a very fine-grained base structure.…”

Section: Scanning Electron Microscopy (Sem)supporting

confidence: 79%

Bias-Enhanced Formation of Metastable and Multiphase Boron Nitride Coating in Microwave Plasma Chemical Vapor Deposition

et al. 2021

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Boron nitride (BN) is primarily a synthetically produced advanced ceramic material. It is isoelectronic to carbon and, like carbon, can exist as several polymorphic modifications. Microwave plasma chemical vapor deposition (MPCVD) of metastable wurtzite boron nitride is reported for the first time and found to be facilitated by the application of direct current (DC) bias to the substrate. The applied negative DC bias was found to yield a higher content of sp3 bonded BN in both cubic and metastable wurtzite structural forms. This is confirmed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). Nano-indentation measurements reveal an average coating hardness of 25 GPa with some measurements as high as 31 GPa, consistent with a substantial fraction of sp3 bonding mixed with the hexagonal sp2 bonded BN phase.

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Section: Scanning Electron Microscopy (Sem)supporting

confidence: 79%

Bias-Enhanced Formation of Metastable and Multiphase Boron Nitride Coating in Microwave Plasma Chemical Vapor Deposition

et al. 2021

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“…[60][61][62] Therefore, extensive research efforts have been devoted in exploring new functional materials for RRAM devices. Two-dimensional vdW materials-based RRAMs have received tremendous research attention over the past few years, [63][64][65] with the advantage of highly-scalable memory cells with low power consumption and fast switching speed. Several reports have explored the use of graphene either as a highly conductive electrode material or as an active layer in RRAM based NVM devices.…”

Section: Gate-tunable Memristive Phenomena In Atomically Thin Materialsmentioning

confidence: 99%

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

Vincent

Liang

Singh

et al. 2021

Applied Physics Reviews

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The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials "beyond graphene", it is possible to explore uncharted opportunities in designing novel heterostructures for electrical tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in the past few years and an outlook of what is to come in the next decade.

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“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,,− ,,,,− Applications of RRAMs include but are not limited to aerospace, chaotic circuits, − neuromorphic computing, ,− memory devices, ,,− ,,− ,− and logical circuit displays. − RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. − RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. − RRAMs usually operate reversibly with...…”

Section: Introductionmentioning

confidence: 99%

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Rehman

Kim

et al. 2021

ACS Appl. Electron. Mater.

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Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of leaving adverse effects on the environment due to the use of toxic and nondegradable functional materials abundantly used in various electronic devices. The use of biomaterials in electronic devices with attractive properties is by far the best solution for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Biomaterials are environmentally friendly and biocompatible with the added advantages of easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This Review targets the characteristics, advancements, role, limitations, and prospects of using biomaterials as the functional layer of a resistive random-access memory (RRAM) device with a primary focus on the electronic properties of bio-RRAMs. Among the available memory devices, RRAMs have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. Applications of using biomaterial-based RRAMs have also been discussed including mimicking the human brain, fabricating wearable memory devices, and implanting bio-RRAMs. The motivation behind this work is to promote the use of biomaterials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic industry.

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Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

Cited by 37 publications

References 40 publications

Bias-Enhanced Formation of Metastable and Multiphase Boron Nitride Coating in Microwave Plasma Chemical Vapor Deposition

Bias-Enhanced Formation of Metastable and Multiphase Boron Nitride Coating in Microwave Plasma Chemical Vapor Deposition

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

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