Superhard boron-rich boron carbide coatings were deposited on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) under controlled conditions, which led to either a disordered or crystalline structure, as measured by X-ray diffraction. The control of either disordered or crystalline structures was achieved solely by the choice of the sample being placed either directly on top of the sample holder or within an inset of the sample holder, respectively. The carbon content in the B-C bonded disordered and crystalline coatings was 6.1 at.% and 4.5 at.%, respectively, as measured by X-ray photoelectron spectroscopy. X-ray diffraction analysis of the crystalline coating provided a good match with a B50C2-type structure in which two carbon atoms replaced boron in the α-tetragonal B52 structure, or in which the carbon atoms occupied different interstitial sites. Density functional theory predictions were used to evaluate the dynamical stability of the potential B50C2 structural forms and were consistent with the measurements. The measured nanoindentation hardness of the coatings was as high as 64 GPa, well above the 40 GPa threshold for superhardness.
Boron nitride (BN) is a member of Group III nitrides and continues to spark interest among the scientific community for its mechanical properties, chemical inertness, thermal conductivity, and electrical insulating properties. In this study, microwave plasma chemical vapor deposition is used to synthesize BN on silicon substrates. Feed gas mixtures of H2, NH3, and B2H6 are used for a range of systematically varied power, pressure, and flow rate conditions. Plasma optical emission from atomic boron is shown to increase nonlinearly by nearly a factor of five with decreasing chamber pressure in the range from 100 to 10 Torr. Copious amounts of atomic boron in the plasma may be beneficial under some growth conditions for producing high hardness boron-rich nitrides, such as B13N2, B50N2, or B6N, which, to date, have only been synthesized under high pressure/high temperature conditions. Despite the higher atomic boron emission in the plasma at low pressure, BN coatings grown at 15 Torr result in hexagonal BN (B/N ratio of 1), regardless of the B2H6 flow rate used in the range of 0.6–3.0 sccm.
Microwave-induced plasma was used to anneal precursor powders containing five metal oxides with carbon and boron carbide as reducing agents, resulting in high entropy boride ceramics. Measurements of hardness, phase structure, and oxidation resistance were investigated. Plasma annealing for 45 min in the range of 1500–2000 °C led to the formation of predominantly single-phase (Hf, Zr, Ti, Ta, Mo)B2 or (Hf, Zr, Nb, Ta, Mo)B2 hexagonal structures characteristic of high entropy borides. Oxidation resistance for these borides was improved by as much as a factor of ten when compared to conventional commercial diborides. Vickers and nanoindentation hardness measurements show the indentation size effect and were found to be as much as 50% higher than that reported for the same high entropy boride configuration made by other methods, with average values reaching up to 38 GPa (for the highest Vickers load of 200 gf). Density functional theory calculations with a partial occupation method showed that (Hf, Zr, Ti, Ta, Mo)B2 has a higher hardness but a lower entropy forming ability compared to (Hf, Zr, Nb, Ta, Mo)B2, which agrees with the experiments. Overall, these results indicate the strong potential of using microwave-induced plasma as a novel approach for synthesizing high entropy borides.
The high-entropy transition metal borides containing a random distribution of five or more constituent metallic elements offer novel opportunities in designing materials that show crystalline phase stability, high strength, and thermal oxidation resistance under extreme conditions. We present a comprehensive theoretical and experimental investigation of prototypical high-entropy boride (HEB) materials such as (Hf, Mo, Nb, Ta, Ti)B2 and (Hf, Mo, Nb, Ta, Zr)B2 under extreme environments of pressures and temperatures. The theoretical tools include modeling elastic properties by special quasi-random structures that predict a bulk modulus of 288 GPa and a shear modulus of 215 GPa at ambient conditions. HEB samples were synthesized under high pressures and high temperatures and studied to 9.5 GPa and 2273 K in a large-volume pressure cell. The thermal equation of state measurement yielded a bulk modulus of 276 GPa, in excellent agreement with theory. The measured compressive yield strength by radial X-ray diffraction technique in a diamond anvil cell was 28 GPa at a pressure of 65 GPa, which is a significant fraction of the shear modulus at high pressures. The high compressive strength and phase stability of this material under high pressures and high temperatures make it an ideal candidate for application as a structural material in nuclear and aerospace fields.
A novel approach is demonstrated for the synthesis of the high entropy transition metal boride (Ta, Mo, Hf, Zr, Ti)B2 using a single heating step enabled by microwave-induced plasma. The argon-rich plasma allows rapid boro-carbothermal reduction of a consolidated powder mixture containing the five metal oxides, blended with graphite and boron carbide (B4C) as reducing agents. For plasma exposure as low as 1800 °C for 1 h, a single-phase hexagonal AlB2-type structure forms, with an average particle size of 165 nm and with uniform distribution of the five metal cations in the microstructure. In contrast to primarily convection-based (e.g., vacuum furnace) methods that typically require a thermal reduction step followed by conversion to the single high-entropy phase at elevated temperature, the microwave approach enables rapid heating rates and reduced processing time in a single heating step. The high-entropy phase purity improves significantly with the increasing of the ball milling time of the oxide precursors from two to eight hours. However, further improvement in phase purity was not observed as a result of increasing the microwave processing temperature from 1800 to 2000 °C (for fixed ball milling time). The benefits of microwave plasma heating, in terms of allowing the combination of boro-carbothermal reduction and high entropy single-phase formation in a single heating step, are expected to accelerate progress in the field of high entropy ceramic materials.
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