Resistive switching effect and charge conduction mechanisms in Y0.95Sr0.05MnO3 manganites: Dynamic role of defects

Hirpara, Bharavi; Gadani, Keval; Sagapariya, Khushal; Gohil, Hardik; Sanghvi, Drashti; Joshi, A.D.; Solanki, P.S.; Shah, N.A.

doi:10.1016/j.tsf.2019.06.005

Cited by 16 publications

(1 citation statement)

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“…The same group has observed the oxygen vacancies influenced the RS in Ag 7+ and Au 9+ ion‐irradiated Ag/La 0.7 Sr 0.3 MnO 3 /Ag and Cr:SrZrO 3 /SRO films, respectively . Recent results on RS of ion‐irradiated Y 1– x Sr x MnO 3 with retention and endurance character indicate stability of memory and resistive window for the device application …”

Section: Introductionmentioning

confidence: 86%

Investigations on the Electronic Excitations through Spectroscopic Measures for Resistive Switching Character of Manganite Thin Films

Rathod

Gadani

Dhruv

et al. 2019

Physica Status Solidi (b)

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Herein, an enhancement in the resistive switching of Y0.95Sr0.05MnO3 (YSMO) films by swift heavy ion (SHI) irradiation‐induced electronic excitations is shown. YSMO films are prepared by pulsed laser deposition on a single‐crystalline Si substrate. For electronic excitations, Ag15+ ions with 200 MeV energy are used with ion fluences of 1 × 1011 (YS1), 1 × 1012 (YS2), and 1 × 1013 (YS3) ions per cm2. X‐ray diffraction shows increase in tensile strain up to YS2 film followed by strain relaxation in YS3 film. Red shifting of Raman active modes signifies the phonon softening due to tensile strain in pristine (YSP) to YS2 films. Atomic force micrographs show that the number and size of defects are increased, indicating the irradiation‐induced defect formation, which is suppressed for the YS3 film. Rutherford backscattering spectrometry demonstrates decreased oxygen peak intensities for YS1 and YS2 films, denoting increased oxygen vacancies. Near‐edge X‐ray absorption fine structure displays a reduction in Mn valence state from Mn4+ to Mn3+, signifying the formation of oxygen vacancies for films up to YS2. The enhancement of resistive switching is governed by tuning the SHI‐induced oxygen vacancies. The present study demonstrates that YSMO films are suitable as emerging candidates in memory device applications.

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Section: Introductionmentioning

confidence: 86%