Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers

Abstract

In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO structures, which permit the formation of Si nanocrystals with a typical size of 5.88 nm and overall good shape homogeneity. The deposition of a different number of Si and SiO bilayers (6, 8 and 10) allowed control of SET/RESET voltages in negative bias ranges 4.5-10 V and 6.3-13 V for six- and ten-bilayer devices, respectively. The corresponding resistance ratio between ON/OFF states varied in the ranges 10-10 for the aforementioned number of bilayers. Based on the result of XPS measurements, we suggest that the resistive switching in the studied system occurs due to the formation and annihilation of Si-Si and Si-O bonds, which serve as conductive pathways and isolating material, respectively.

Utilizing Hydrolysate Derived from Biorefinery as a Carbon Coating Source for Silicon–Carbon Anodes in Lithium-Ion Capacitors

“…The fitting peaks within the range of 100.0−103.1 can be attributed to Si 1+ , Si 2+ , and Si 3+ . 20,28,29 The presence of Si 4+ indicates that SiO 2 was successfully encapsulated in Si NPs. The results obtained from SEM, TEM, Raman spectroscopy, XRD, TGA, and XPS confirm the successful synthesis of a Si/C composite featuring Si NPs coated with a hydrolysate-derived carbon matrix.…”

Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM

“…During the XPS analysis for SiO x and TiN layers, the peaks corresponding to various bonding states are analyzed with reference to the C 1s (C–C bond) peak energy of 284.8 eV. The Si 2p electron binding energies for the oxidation states of Si 4+ , Si 3+ , Si 2+ , and Si 1+ in SiO x are determined to be 103.7, 102.7, 101.6, and 100.4 eV, respectively . The relative contribution of the different bonding states in SiO x is determined by analyzing the area percentages of the respective Gaussian graphs.…”

“…The Si 2p electron binding energies for the oxidation states of Si 4+ , Si 3+ , Si 2+ , and Si 1+ in SiO x are determined to be 103.7, 102.7, 101.6, and 100.4 eV, respectively. 38 The relative contribution of the different bonding states in SiO x is determined by analyzing the area percentages of the respective Gaussian graphs. The area percentages are 58.9, 27.…”

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems

“…At the same time, the electrical characterization of SRO films clearly shows not only an intrinsic RS behavior but also the presence of multiple conductance states [ 31 , 32 ]. In our previous works, we demonstrated the control of unipolar and bipolar abrupt (i.e., digital) RS for Si-NCs embedded in Si/SiO 2 multilayer (ML) structures [ 32 , 33 ]. These devices exhibit multilevel RS behavior, that is, different resistance states during the partial formation and annihilation of the conductive filaments.…”