Resistive switching characteristics of zinc oxide (ZnO) resistive RAM with Al metal electrode

Lin, Cheng-Li; Tang, Chi-Chang; Wu, Shu-Ching; Yang, Song; Lai, Yi-Hsiu; Wu, Shich-Chuan

doi:10.1109/inec.2011.5991798

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…Hence, unsatisfactory switching characteristics may be experienced due to the excess volume of native point defects. Numerous attempts have been reported in the literature on ZnO's switching dynamics based on electrodes' effects to alleviate ZnO's defects for improving switching characteristics, such as ZnO's stacking with various metal electrodes [120]- [124]. In RRAM, electrodes serve as the transport path for charge carriers and affect the resistance switching behaviour.…”

Section: Zno For Rram Application a Significance Of Electrodes In Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Section: Zno For Rram Application a Significance Of Electrodes In Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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“…Kim [8] Proved sol-gel-derived zinc oxide (ZnO) can also be used to manufacture resistors. Lin's first work [9] investigated the resistive switching characteristics of Al/ZnO/Al RRAM for ZnO film with and without N2 RTA treatment; He's second work [10] investigated the characteristics of ZnO film as resistive RAM (RRAM) using Al electrode. Zhao [11] explored the effect of electrode material to the properties of resistance.…”

Section: Theoretical Studies On Memristormentioning

confidence: 99%

The Recent Advances of Research on Memristor and Memristive Characteristic Devices

Hong

Wei

et al. 2013

AMR

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As a circuit element, memristor behaves like a nonlinear resistor with memory. It is demonstrated as the fourth fundamental circuit element in addition to resistor, capacitor and inductor. This paper summarized the main progress in this field, such as, the development of models and mechanism, the selection of new materials, the experimental results, and the similarities and differences of unipolar and bipolar Resistive Switching Characteristics

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“…It was found that RRAMs based on TaO x 26 and AlO x 27 require a high programming voltage, while those based on SiO 2 have inferior device stability due to the high ion mobility in SiO 2 , which leads to the dendritic growth of conductive filaments (CFs). 28 Additionally, ZnO- 29 and TiO 2 30 -based RRAMs have a high leakage current density thanks to the narrower bandgap of these metal oxides. It turns out that HfO 2 is one of the promising dielectric layers for RRAMs due to its excellent resistive switching (RS) characteristics such as a large resistive window, a low V set , and good endurance and retention characteristics.…”

Section: Introductionmentioning

confidence: 99%

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

Pan,

He,

Dan

et al. 2023

ACS Appl. Electron. Mater.

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Resistive random access memory (RRAM) has emerged as a memory technology due to its simple structure and compatibility with CMOS technology. In recent years, it was reported that HfO 2 -based RRAMs are promising for commercial applications but suffer from a relatively poor performance in stability and retention due to the random formation and breakage of the conductive channels. In this work, we introduced a layer of Ag nanoparticles embedded in the HfO 2 resistive switching layer to address the randomness in HfO 2 -based RRAMs. It was found that the embedding of Ag nanoparticles enhances the local electric field in HfO 2 , as a result of which conductive filaments in the RRAM will preferably grow where nanoparticles are located. By controlling the uniformity and distribution of Ag nanoparticles, the resistive switching uniformity is significantly improved. The relative fluctuation of V set is reduced from 13.85 to 6.96%, and the relative fluctuation of V reset is reduced from 23.01 to 14.45%. More importantly, we also achieved strong stability and a large resistive window with an on/off ratio of up to 10 2 . In the end, we proposed a resistive switching model to interpret the experimental observations.

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Resistive switching characteristics of zinc oxide (ZnO) resistive RAM with Al metal electrode

Cited by 6 publications

References 8 publications

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

The Recent Advances of Research on Memristor and Memristive Characteristic Devices

HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

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Resistive switching characteristics of zinc oxide (ZnO) resistive RAM with Al metal electrode

Cited by 6 publications

References 8 publications

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

The Recent Advances of Research on Memristor and Memristive Characteristic Devices

HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability

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Product

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HfO₂-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability